01611nas a2200277   4500008004100000022001400041245005900055210005800114260007300172300001400245490000800259520071800267653002400985653001901009653002901028653000901057653000901066100002101075700002401096700002501120700002301145700002201168700003001190700002001220856009301240       2007                        eng d  a0169-433200aField emission investigations of RuO2-doped SnO2 wires0 aField emission investigations of RuO2doped SnO2 wires  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a9159-91630 v2533 a<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emission10afield enhancement factor10aRuO210aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigations-ruo2-doped-sno2-wires-001771nas a2200265   4500008004100000022001400041245006200055210006100117260007300178300001400251490000700265520091100272653002201183653001301205653001901218653000901237100002101246700002401267700002301291700002301314700002201337700003001359700002001389856009601409       2009                        eng d  a1293-255800aField emission investigation of single Fe-doped SnO2 wire0 aField emission investigation of single Fedoped SnO2 wire  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1114-11170 v113 a<p>Tin oxide submicronwires doped with Fe element were prepared by the thermal evaporation method. Morphological and structural characterizations revealed wires with sub micron size and crystalline in nature. The field electron emission from the single Fe:SnO2 wire was carried out in conventional field emission microscope. The Fowler-Nordheim plot obtained from I-V characteristics of the wire showed a linear behavior typical that of metal. The field enhancement factor estimated from the slope of the F-N plot is 7455 cm(-1), indicating that the field emission is from nanometric features of the emitter. A current density of 10 A/cm(2) has been obtained at an applied field of 4.845 x 10(3) V/mu m. The field emission current-time record at a current level of 1 mu A for more than 3 h duration is promising for various field emissions based applications. (C) 2009 Published by Elsevier Masson SAS.</p>10aCurrent stability10aFe doped10afield emission10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, Bhaskar, R.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigation-single-fe-doped-sno2-wire-001688nas a2200289   4500008004100000022001400041245008700055210006900142260009200211300001800303490000600321520071700327653001801044653001101062653001101073653001901084653001401103653000901117100002101126700002401147700001401171700002301185700002201208700003001230700002001260856011801280       2010                        eng d  a1745-808000aFabrication of In-doped SnO2 nanowire arrays and its field emission investigations0 aFabrication of Indoped SnO2 nanowire arrays and its field emissi  a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcDEC  aPII 9312836630 v53 a<p>The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mu A/cm2 is drawn from the emitter at an applied field of 4 V/mu m. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mu A is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.</p>10acold cathodes10adevice10aDoping10afield emission10aNanowires10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/fabrication-doped-sno2-nanowire-arrays-and-its-field-emission-investigations-001822nas a2200265   4500008004100000022001400041245010300055210006900158260012500227300001100352490000700363520081100370653002101181653002001202653001901222653001501241100002801256700003001284700002401314700002501338700002201363700002301385700002001408856012801428       2010                        eng d  a0003-695100aHigh current density, low threshold field emission from functionalized carbon nanotube bucky paper0 aHigh current density low threshold field emission from functiona  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAUG  a0731020 v973 a<p>Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of ``as-grown'' sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler-Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm(2) and 8.5 mA/cm(2) for ``as-grown'' and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479049]</p>10aCarbon nanotubes10acurrent density10afield emission10afullerenes1 aKakade, Bhalchandra, A.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aChavan, Padmakar, G.1 aSheini, Farid, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/high-current-density-low-threshold-field-emission-functionalized-carbon-nanotube-bucky-001785nas a2200301   4500008004100000022001400041245006700055210006600122260007700188300001400265520077300279653003601052653001901088653002201107653001901129653001101148653001301159100002601172700002301198700002301221700002001244700002301264700002701287700002301314700002101337700002401358856010101382       2014                        eng d  a1434-194800aMetallic few-layer flowerlike VS2 nanosheets as field emitters0 aMetallic fewlayer flowerlike VS2 nanosheets as field emitters  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcNOV  a5331-53363 a<p>We report first-principles DFT calculations of the single-layer VS2 work function, the experimental synthesis of flower-like few-layer-thick VS2 nanosheets by a simple one-step hydrothermal method, and the investigation of their field emission properties. The turn-on field required to draw emission current densities of 1 and 10 mu A/cm(2) were 4 and 5.01 V/mu m, respectively. The observed turn-on field values are attributed to the high field enhancement factor (ca. 2500), which is due to presence of sharp protrusions in the VS2 nanosheets. Furthermore, the field-emission current stability of the VS2 emitter shows stable behavior over a period of 12 h. Further, DFT calculations show that the work function (f) of the single-layer VS2 emitter is 6.01 eV.</p>10aDensity functional calculations10afield emission10aLayered compounds10aNanostructures10aSulfur10aVanadium1 aRout, Chandra, Sekhar1 aKhare, Ruchita, T.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aLanzillo, Nicholas, A.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/metallic-few-layer-flowerlike-vs2-nanosheets-field-emitters-002794nas a2200265   4500008004100000020002200041245011500063210006900178260019300247520172400440653001902164653002102183653001902204100002602223700002002249700002702269700002402296700001502320700001602335700001602351700001402367700001602381700001402397856011702411       2014                        eng d  a978-1-4799-5306-600aPhotosensitive field emission study of SnS2 nanosheets (27th International Vacuum Nanoelectronics Conference )0 aPhotosensitive field emission study of SnS2 nanosheets 27th Inte  a345 E 47TH ST, NEW YORK, NY 10017 USAbPaul Scherrer Inst; EMPA, Mat Sci & Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices SoccJUL3 a<p>SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to Field Emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solution are used. The FE study is carried out in all metal Ultra High Vacuum (UHV) chamber in planar diode configuration at a base pressure of similar to 10(-8) torr. A maximum current density of 110 mu A/cm(2) was attainable. The turn on field required to draw a current density of 1 mu A/cm(2) is found to be 2.6 V/mu m. A separate study was carried out to investigate the photosensitivity of the emitter by illuminating the specimen under visible light. In dark, the FN plot is non-linear, indicative of semiconductor nature of the emitter. However, on illumination, the FN plot is observed to be linear. This remarkable change can be explained by the photoconductivity imparted on illumination. The field at the tip is high in presence of light, than in dark, due to enhanced conductivity. It is also observed that on switching ON the light, the FE current increases almost instantaneously. Repetitive switching is observed at a fixed applied voltage, generating current pulses. The visible light soaking of the sample is carried out by illuminating the lamp for more than 100 minutes, where the current seems to saturate. On switching off the lamp the emission current decayed almost to its initial value exponentially. The photosensitivity has been studied for different wavelengths in the visible spectra. The maximum photosensitive field emission is observed for green filter. With this photoresponse, it is envisaged that SnS2 nanosheets are a potential candidate for optoelectronic applications of field emitters.</p>
10afield emission10aphotosensitivity10aPhotoswitching1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aRout, Chandra, Shekhar1 aLate, Dattatray, J.1 aTsujino, S1 aGobrecht, J1 aParaliev, M1 aBraun, HH1 aGroening, O1 aFeurer, T  uhttps://library.ncl.res.in/content/photosensitive-field-emission-study-sns2-nanosheets-27th-international-vacuum02217nas a2200277   4500008004100000022001400041245009700055210006900152260007100221300001600292490000600308520122000314653001901534653000901553653003201562653002801594653001401622100002401636700002301660700002301683700002301706700002801729700002301757700002901780856013001809       2014                        eng d  a1944-824400aPulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies0 aPulsed laserdeposited MoS2 thin films on W and Si field emission  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcSEP  a15881-158880 v63 a<p>We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.</p>10afield emission10aMoS210aphotodiode heterostructures10apulsed laser deposition10athin film1 aLate, Dattatray, J.1 aShaikh, Parvez, A.1 aKhare, Ruchita, T.1 aKashid, Ranjit, V.1 aChaudhary, Minakshi, V.1 aMore, Mahendra, A.1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/pulsed-laser-deposited-mos2-thin-films-w-and-si-field-emission-and-photoresponse-studies-001721nas a2200217   4500008004100000022001400041245009000055210006900145260007700214300001400291520089900305653001901204653002201223653001901245653001501264100002401279700002801303700002301331700002401354856012501378       2015                        eng d  a1434-194800aElectrochemically exfoliated black phosphorus nanosheets - prospective field emitters0 aElectrochemically exfoliated black phosphorus nanosheets prospec  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcJUL  a3102-31073 a<p>Herein we report field emission (FE) investigations on an electrochemically exfoliated few-layered black phosphorus nanosheet emitter at a base pressure of approximately 1x10(-8) mbar. The turn-on electric field required to draw an emission current density of approximately 10 A/cm(2) is found to be about 4.2 V/m. Furthermore, few-layered black phosphorus nanosheet emitters deliver an emission current density of about 170 A/cm(2) at an applied field of about 7.5 V/m. The emission current vs. time plot measured at preset current values of about 5 A shows emission current fluctuations within +/- 10% of the average value, indicating the highly stable nature of the black phosphorus field emitter. Thus, the 2D black phosphorus nanosheets synthesized using the simple electrochemical exfoliation method can be utilized for micro/nanoelectronics and flat panel FE display applications.</p>10afield emission10aLayered compounds10aNanostructures10aPhosphorus1 aErande, Manisha, B.1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/electrochemically-exfoliated-black-phosphorus-nanosheets-prospective-field-emitters-001762nas a2200277   4500008004100000022001400041245006700055210006700122260008100189300001100270490000600281520085000287653003001137653001901167653001501186653001201201653001101213100002301224700002301247700002401270700002301294700001801317700002401335700002601359856009901385       2015                        eng d  a2053-159100aEnhanced electron field emission from NiCo2O4 nanosheet arrays0 aEnhanced electron field emission from NiCo2O4 nanosheet arrays  aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcSEP  a0950110 v23 a<p>Electron emission properties of electrodeposited spinel NiCo2O4 nanosheet arrays grown on Ni foam have been studied. The work function of NiCo2O4 was calculated by density functional theory using the plane-wave basis set and used to estimate the field enhancement factor. The NiCo2O4 nanosheet arrays exhibited a low turn-on field of 1.86 V mu m(-1) at 1 mu A cm(-2) and current density of 686 mu A cm(-2) at 3.2 V mu m(-1), with field enhancement factor beta = 1460 and good field emission current stability. The field emission properties of the NiCo2O4 nanosheet arrays showed enhanced performance compared to chemically prepared NiCo2O4 nanosheets. Hence, the nanosheet arrays have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.</p>10aDensity functional theory10afield emission10ananosheets10aNiCo2O410aspinel1 aNaik, Kusha, Kumar1 aKhare, Ruchita, T.1 aGelamo, Rogerio, V.1 aMore, Mahendra, A.1 aThapa, Ranjit1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar  uhttps://library.ncl.res.in/content/enhanced-electron-field-emission-nico2o4-nanosheet-arrays-101580nas a2200241   4500008004100000022001400041245009800055210006900153260007300222300001000295490000800305520070800313653002501021653001901046653001001065653001901075100002801094700002201122700002201144700002401166700002301190856012501213       2015                        eng d  a0304-399100aSpectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter0 aSpectral analysis of the emission current noise exhibited by few  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcFEB  a51-570 v1493 a<p>Spectral analysis of the field emission (FE) current fluctuations has been carried out at the base pressure similar to 1 x 10(-8) mbar. The emission current stability investigated at preset value of 2 mu A is characterized by `step like fluctuation. The spectral analysis performed on a FFT (Fast Fourier Transform) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha as similar to 1.05. The estimated value of alpha implies that the current fluctuations are mainly due the various processes occurring on atomic scale like adsorption, migration, and/or desorption of the residual gas species on the emitter surface. (C) 2014 Elsevier B.V. All rights reserved.</p>10aCurrent fluctuations10afield emission10aNoise10aWS2 nanosheets1 aSuryawanshi, Sachin, R.1 aKolhe, Pankaj, S.1 aRout, Chandra, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/spectral-analysis-emission-current-noise-exhibited-few-layer-ws2-nanosheets-emitter-002299nas a2200265   4500008004100000022001400041245012600055210006900181260007300250300001200323490000800335520132700343653001901670653002001689653001601709653001501725100002101740700002801761700002601789700002001815700002301835700002401858700002101882856013001903       2016                        eng d  a1387-181100aArchitecture of 2D MoS2 nanosheets and 3D CdMoS4 marigold flowers: consequence of annealing on field emission performance0 aArchitecture of 2D MoS2 nanosheets and 3D CdMoS4 marigold flower  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a573-5790 v2253 a<p>Herein, we report the field electron emission investigations on template free solvothermally synthesized layered MoS2 nanosheets as well as novel phase of CdMoS4 nanoflowers at the base pressure of similar to 1 x 10(-8) mbar. The turn-on field, threshold field and maximum emission current densities for both MoS2 and CdMoS4 are strongly influenced by thermal annealing in inert atmosphere. The turn on field, required to draw emission current density of 1 mu A/cm(2) is found to be 5.8 and 3.2 V/mu m for pristine and annealed MoS2 at 400 degrees C. In case of as prepared and annealed CdMoS4 sample the turn on field values are found to be similar to 6.2 and 5.0 V/mu m, respectively. The emission current versus time (I-t) plot measured at the preset current values of similar to 1 mu A for pristine and annealed sample indicates stable operation of the emitter. The emission current fluctuations for annealed sample are observed to be less as compared with the pristine sample due to conditioning of the emitter, thereby showing highly stable nature of emitter. Thus, the present result demonstrates the potential of annealed MoS2 nanosheets and CdMoS4 nanoflowers as an emerging materials for micro/nanoelectronics and flat panel field emission display applications. (C) 2016 Elsevier Inc. All rights reserved.</p>10afield emission10aMoS2 and CdMoS410aNanoflowers10ananosheets1 aKadam, Sunil, R.1 aSuryawanshi, Sachin, R.1 aPanmand, Rajendra, P.1 aMate, Vivek, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aKale, Bharat, B.  uhttps://library.ncl.res.in/content/architecture-2d-mos2-nanosheets-and-3d-cdmos4-marigold-flowers-consequence-annealing-field02336nas a2200253   4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008601996       2016                        eng d  a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2  aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR  aArticle Number: 0350030 v33 a<p>Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.</p>10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose202226nas a2200241   4500008004100000022001400041245014000055210006900195260000800264300001200272490000600284520138100290653001501671653001901686653001501705100002801720700001801748700002101766700002401787700002401811700002301835856012601858       2017                        eng d  a2365-654900aExtraction of the very high tunneling current and extremely stable emission current from GdB6/W-tip source synthesized using arc plasma0 aExtraction of the very high tunneling current and extremely stab  cJAN  a562-5660 v23 a<p>Herein, we report the one step arc plasma synthesis of the GdB6 (Gadolinium hexaboride) nanoparticles and its field emission (FE) characteristics on tungsten point substrate (GdB6/ W). The SEM /TEM analysis revealed the GdB6 nanoparticles on W point substrate exhibit irregular shaped, grainy, dense, course morphology, i.e. uniformly covering the entire tip substrate surface. For GdB6/W point source, the values of the turn-on and threshold fields, defined as field required to draw an emission current density similar to 1 mA/cm(2) and similar to 100 mA/cm(2), respectively are found to be similar to 2.2 and similar to 2.7 V/mm, for anodecathode separation of similar to 1 mm. Interestingly, a very high emission current density of similar to 3.5 A/cm(2) has been drawn from the GdB6/W point emitter at relatively lower applied field of similar to 6.4 V/mm. The field enhancement factor found to be similar to 10,250. The GdB6/W point electron source exhibits a good emission current stability at similar to 10 mA for a period of 6 hr. The emission current stability is enumerated in terms of standard deviation and its magnitude has been measured to be only 1.72% with respect to the average value. The superlative field emission characteristics signify the GdB6/W point electron source as potential candidates for vacuum micro/nanoelectronics device applications.</p>10aArc Plasma10afield emission10aThin films1 aSuryawanshi, Sachin, R.1 aKanhe, Nilesh1 aMathe, Vikas, L.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/extraction-very-high-tunneling-current-and-extremely-stable-emission-current-gdb6w-tip02851nas a2200253   4500008004100000022001400041245010500055210006900160260000800229300001100237490000600248520197200254653002102226653001902247653004502266653001602311100002302327700002402350700002502374700002302399700002402422700002802446856012302474       2019                        eng d  a2053-159100aGraphene nanosheets assisted carbon hollow cylinder for high-performance field emission applications0 aGraphene nanosheets assisted carbon hollow cylinder for highperf  cSEP  a0950660 v63 a<p>Electron sources are critical constituents for myriad many electronic applications including electron imaging, mass spectroscopy etc. Here, we report the realization of high-performance field emission from graphene assisted carbon hollow cylinders (Gr-CHCs) composed of multi-stacked radially aligned CNTs. These CHCs have built-in synthesis related Fe nanoparticles (NPs). This engineered nano-structure exhibits excellent field emission properties such as one of the ultra-low turn-on field (0.64V mu m(-1) at 10 mu A cm(-2)), low threshold field (0.74V mu m(-1) at 100 mu A cm(-2)), very high current density (15.49 mA cm(-2) at 1.32V mu m(-1)) which is nearly double the current density obtained in our previous study. High field enhancement factor (0.72. x. 10(4)) with highly stable emission current at 100 mu A was observed for more than 3 hrs at the base pressure of similar to 1. x. 10(-8) mbar. This study suggests an approach to enhance the current density using the proposed innovative nanostructure and forms the basic theme of this communication. Highly efficient and stable field emissions observed are attributed to the geometry of cylinder and the production of the high density of sharp protrusions within the graphene sheets which enhance the local electric field and dramatically enhance field emission. This innovative cylindrical geometry associated with graphene assisted on Fe bearing aligned CNTs along with the periphery of the bulk cylinder provides an easy injection of electrons from the conduction band of CHCs into the vacuum in the presence of an external electric field. The tunability of field emission properties of these CHCs can be easily achieved by tailoring their diameter (10 and 20 mm) and different concentrations of the precursor. This new approach of the graphene assisted cylindrical geometry-based field emitter source provides enormous prospects and demand for next-generation high resolutions display devices.</p>
10aCarbon nanotubes10afield emission10agraphene assisted carbon hollow cylinder10aprotrusions1 aTripathi, Prashant1 aGupta, Bipin, Kumar1 aBankar, Prashant, K.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aSrivastava, Onkar, Nath  uhttps://library.ncl.res.in/content/graphene-nanosheets-assisted-carbon-hollow-cylinder-high-performance-field-emission02322nas a2200229   4500008004100000022001400041245009800055210006900153260000800222300001200230520153600242653001001778653001901788653002101807653001301828653002701841100002501868700002501893700002301918700002401941856012701965       2019                        eng d  a1862-630000aRealization of efficient field emitter based on reduced graphene oxide-Bi2S3 heterostructures0 aRealization of efficient field emitter based on reduced graphene  cJUL  a19001213 a<p>Herein, Bi2S3 nanorods and reduced graphene oxide (rGO)-Bi2S3 heterostructures are synthesized using a simple hydrothermal method. The structural, morphological, chemical, and elemental analysis of as-synthesized materials is performed using X-ray diffraction (XRD), Raman spectroscopy, field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Field emission (FE) studies are carried out on both pristine Bi2S3 nanorods and rGO-Bi2S3 heterostructure samples at a base pressure of approximate to 1 x 10(-8) mbar. The results show that the rGO-Bi2S3 heterostructure emitter has superior FE performance compared to pristine Bi2S3 emitters in terms of the turn-on field (2.6 V mu m(-1) at 10 mu A cm(-2)) and threshold field (4.0 V mu m(-1) at 100 mu A cm(-2)) along with a high emission current density of approximate to 1464 mu A cm(-2) at an applied electric field of 7.0 V mu m(-1). The rGO-Bi2S3 heterostructure emitter exhibits very good emission current stability, tested for more than 3 h duration, characterized by standard deviation values approximate to 2.84 and 4.06, corresponding to preset values 12 and 100 mu A. This study implies that one-step hydrothermal route can be efficiently used to synthesize organic-inorganic heterostructures that possess unique morphology. Furthermore, the synthesized rGO-Bi2S3 heterostructure emitter shows potential as an electron source for practical application in vacuum microelectronic devices.</p>
10aBi2S310afield emission10aHeterostructures10aNanorods10aReduced graphene oxide1 aGote, Gorkshnath, H.1 aBhopale, Somnath, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/realization-efficient-field-emitter-based-reduced-graphene-oxide-bi2s3-heterostructures02598nas a2200337   4500008004100000245008900041210006900130260000800199300001000207490000600217520154200223653002201765653001901787653001501806653001501821653000901836100002201845700002301867700002301890700002001913700001901933700002001952700002301972700002001995700001802015700002302033700003102056700003002087700002402117856011902141       2023                        eng d00aTitanium trisulfide nanosheets and nanoribbons for field emission- based nanodevices0 aTitanium trisulfide nanosheets and nanoribbons for field emissio  cJAN  a44-490 v63 a<p>
	The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of similar to 0.3 V/ mu m, required for drawing an emission current density of similar to 10 mu A/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of similar to 0.9 mA/ cm2 at a relatively low applied electric field of similar to 0.4 V/mu m. We have estimated the values of the field enhancement factor (beta), which are found to be similar to 5 x 104 for the TiS3 nanosheet emitter and similar to 4 x 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of beta. In fact, the nanosheet sample presents a higher density of ultrathin layers (similar to 12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are similar to 19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices.</p>
10aCurrent stability10afield emission10ananoribbon10ananosheets10aTiS31 aPawbake, Amit, S.1 aKhare, Ruchita, T.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, R.1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aPawar, Mahendra1 aFrank, Otakar1 aMore, Mahendra, A.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/titanium-trisulfide-nanosheets-and-nanoribbons-field-emission-based-nanodevices