02342nas a2200265   4500008004100000022001400041245006100055210006000116260009200176300001200268490000600280520146300286653001901749653002601768653001901794653000801813100002401821700002601845700002201871700002201893700002001915700002301935700002301958856009501981       2009                        eng d  a1662-525000aField emission properties of Al-doped ZnO nanostructures0 aField emission properties of Aldoped ZnO nanostructures  aLAUBISRUTISTR 24, STAFA-ZUERICH, CH-8712, SWITZERLANDbTRANS TECH PUBLICATIONS LTDcJAN  a231-2370 v53 a<p>Field emission from Al-doped ZnO nanostrcutures has been investigated in planar diode configuration under ultra high vacuum conditions. The Al-doped ZnO nanostructures were synthesized by co-precipitation method with varying aluminium concentrations. The as- synthesized product was characterized by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The threshold field required to draw a current density of similar to 1 mu A/cm(2) was observed to be similar to 2.0 V/mu m and similar to 2.3 V/mu m for Al-doped ZnO nanostructures synthesized with aluminium concentrations of 1% and 3%, respectively. The Fowler- Nordheim (F-N) plots for both the specimens exhibit non-linear behaviour, which is observed to be specimen dependent. The nonlinearity observed in the F-N plots has been interpreted on the basis of the theory of electron emission from semiconductor emitters. The field enhancement factors, estimated from the slope of the F-N plots, are found to be similar to 9.3 x 10(3) and 3.9 x 10(3) for 1% and 3% Al-doped ZnO emitters, respectively. The high values of the field enhancement factor Suggest that the emission is from the nanostructures. The emission current stability measured at the preset value of similar to 2 mu A over a period of more than three hours is found to be fairly stable. The results indicate use of Al-doped ZnO nanostructures as promising emitters for field emission based devices.</p>10afield emission10aFowler-Nordheim plots10aNanostructures10aZnO1 aNavale, Shalaka, C.1 aSheini, Farid, Jamali1 aPatil, Sandip, S.1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aGosavi, Suresh, W.  uhttps://library.ncl.res.in/content/field-emission-properties-al-doped-zno-nanostructures-002650nas a2200253   4500008004100000022001400041245012100055210006900176260007100245300001400316490000600330520168600336653002202022653002102044653001802065653002402083653003602107100002802143700002502171700002202196700002502218700002302243856013002266       2014                        eng d  a1944-824400aVapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior0 aVaporliquidsolid growth of onedimensional tin sulfide sns nanost  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB  a2018-20250 v63 a<p>Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.</p>10aElectron emission10aID nanostructure10aSnS nanowires10athermal evaporation10avapor-liquid-solid (VLS) growth1 aSuryawanshi, Sachin, R.1 aWarule, Sambhaji, S.1 aPatil, Sandip, S.1 aPatil, Kashinath, R.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/vapor-liquid-solid-growth-one-dimensional-tin-sulfide-sns-nanostructures-promising-field-002496nas a2200253   4500008004100000022001400041245013100055210006900186260006700255300002600322490000800348520151500356653002401871653002101895653002801916653002801944100002201972700002601994700002302020700002502043700002202068700002302090856012902113       2015                        eng d  a0021-899500aMultifunctional polyaniline-tin oxide (PANI-SnO2) nanocomposite: synthesis, electrochemical, and field emission investigations0 aMultifunctional polyanilinetin oxide PANISnO2 nanocomposite synt  a111 RIVER ST, HOBOKEN 07030-5774, NJ USAbWILEY-BLACKWELLcFEB  aArticle Number: 414010 v1323 a<p>Synthesis of PANI-SnO2 nanocomposite has been performed using a simple two step chemical oxidative polymerization route. The structural, morphological and chemical properties of the as-synthesized PANI-SnO2 nanocomposite have been revealed by various characterization techniques such as SEM, TEM, XRD, FTIR, and XPS. Interestingly the as-synthesized PANI-SnO2 nanocomposite exhibits supercapacitance value of 721 F g(-1) with energy density 64 Wh kg(-1), which is noticed to be higher than that of pristine SnO2 and PANI nanostructures. Furthermore, the galvanostatic charge-discharge characteristics revealed pseudocapacitive nature of the PANI-SnO2 nanocomposite. The estimated values of charge transfer resistance and series resistance estimated from the Nyquist plot are found to be lower. Along with the supercapacitive nature, PANI-SnO2 nanocomposite showed promising field emission behavior. The threshold field, required to draw emission current density of 1 A/cm(2), is observed to be 0.90 V/m and emission current density of 1.2 mA/cm(2) has been drawn at applied field of approximate to 2.6 V/m. The emission current stability investigated at preset values of 0.02 and 0.1 mA/cm(2) is observed to be fairly stable over duration of more than 3 h. The enhanced supercapacitance values, as well as, the promising field emission characteristics are attributed to the synergic effect of SnO2 nanoparticles and PANI nanotubes. (c) 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 41401.</p>10aconducting polymers10aElectrochemistry10ananostructured polymers10asurfaces and interfaces1 aPatil, Sandip, S.1 aHarpale, Kashmira, V.1 aKoiry, Shankar, P.1 aPatil, Kashinath, R.1 aAswal, Dinesh, K.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/multifunctional-polyaniline-tin-oxide-pani-sno2-nanocomposite-synthesis-electrochemical-1