02554nas a2200325 4500008004100000022001400041245010200055210006900157260007100226300001600297490000600313520142000319653002201739653002201761653002301783653001901806653002101825653002001846100002201866700002301888700002001911700002201931700002001953700002301973700002401996700003102020700003002051700002402081856012302105 2015 eng d a1944-824400aTemperature-dependent raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets0 aTemperaturedependent raman spectroscopy of titanium trisulfide T a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcNOV a24185-241900 v73 a

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community because it presents a direct bandgap of similar to 1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm(2) V-1 s(-1). However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction that can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature-dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 to 570 K due to anharmonic vibrations of the lattice, which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors, such as MoS2, MoSe2, WSe2, and black phosphorus (BP). This marked temperature dependence of the Raman spectra could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a noninvasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to lower interlayer coupling in the nanosheets.

10a2D semiconductors10alayered materials10aRaman spectroscopy10athermal effect10aTiS3 nanoribbons10aTiS3 nanosheets1 aPawbake, Amit, S.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, Ramon1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aJadkar, Sandesh, R.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-titanium-trisulfide-tis3-nanoribbons-and-001766nas a2200217 4500008004100000022001400041245015400055210006900209260011000278300001600388490000600404520084700410100002201257700002201279700002501301700002401326700002401350700002601374700002401400856012401424 2016 eng d a2046-206900aEffect of plasma treatment on multilayer graphene: X-ray photoelectron spectroscopy, surface morphology investigations and work function measurements0 aEffect of plasma treatment on multilayer graphene Xray photoelec aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcMAY a48843-488500 v63 a

We report here the effect of plasma treatment on multilayer graphene samples as determined by X-ray photoelectron spectroscopy and surface morphology studies with atomic force microscopy, scanning electron microscopy and transmission electron microscopy. The plasma treatment was modified to introduce controlled levels of defects and functionalities to the graphene samples to give tunable properties. The elemental composition and structure were investigated by XPS and micro Raman spectroscopy. The XPS study showed that there was a slight variation in the sp(2)/sp(3) hybridization ratio between the plasma-treated samples and the pristine sample. Kelvin probe measurements were carried out on all the multilayer graphene samples and indicated a slight variation in the work function of the graphene samples after plasma treatment.

1 aPatil, Urmila, V.1 aPawbake, Amit, S.1 aMachuno, Luis, G. B.1 aGelamo, Rogerio, V.1 aJadkar, Sandesh, R.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/effect-plasma-treatment-multilayer-graphene-x-ray-photoelectron-spectroscopy-surface02336nas a2200253 4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008601996 2016 eng d a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2 aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR aArticle Number: 0350030 v33 a

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.

10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose201384nas a2200157 4500008004100000245007800041210006900119260000800188300002700196490000600223520081700229100002201046700002401068700002401092856011001116 2016 eng d00aHigh performance humidity sensor and photodetector based on SnSe nanorods0 aHigh performance humidity sensor and photodetector based on SnSe cOCT aArticle Number: 1050380 v33 aTin selenide (SnSe) nanorods were synthesized using a. one-step solvothermal route and. their. humidity sensing and photodetection performance at room temperature were investigated. The results depict. that SnSe nanorod-based humidity and photosensors have. good long-term stability, are. highly sensitive and have. fast response and recovery times. In the. case of the. humidity sensor it was observed that the resistance of the films decreased. with increasing relative humidity (RH). The humidity sensing behaviors were investigated in the range. 11-97% RHat room temperature. A. response time of similar to 68 s and recovery time of similar to 149 s were observed for. the humidity sensor. The photosensing behavior showed. typical response/recovery times of similar to 3 s with highly reproducible behavior.1 aPawbake, Amit, S.1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-humidity-sensor-and-photodetector-based-snse-nanorods02462nas a2200253 4500008004100000022001400041245013900055210006900194260007100263300001400334490000600348520151800354653003001872653002001902653001701922653001601939653001401955653002301969100002201992700002502014700002402039700002402063856012102087 2016 eng d a1944-824400aHighly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications0 aHighly transparent waferscale synthesis of crystalline WS2 nanop a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB a3359-33650 v83 a

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E12g and A1g at similar to 356 and similar to 420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of similar to 12 s and recovery time of similar to 13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of similar to 51 s and recovery time of similar to 88 s were observed with sensitivity similar to 137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

10achemical vapor deposition10ahumidity sensor10ananoparticle10aphotosensor10athin film10atungsten disulfide1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aLate, Dattatray, J.1 aJadkar, Sandesh, R. uhttps://library.ncl.res.in/content/highly-transparent-wafer-scale-synthesis-crystalline-ws2-nanoparticle-thin-film-001567nas a2200181 4500008004100000022001400041245014600055210006900201260011000270300001400380490000600394520076000400100002201160700002401182700002401206700002401230856013101254 2016 eng d a2040-336400aLarge area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies0 aLarge area chemical vapor deposition of monolayer transition met aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJAN a3008-30180 v83 a

We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 mu m in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and anharmonicity. The temperature dependent softening modes of chemical vapor deposited mono-layers of all TMDCs were explained on the basis of a double resonance phonon process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other emerging two-dimensional layered and heterostructured materials.

1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/large-area-chemical-vapor-deposition-monolayer-transition-metal-dichalcogenides-and-their-001981nas a2200193 4500008004100000245018500041210006900226260000800295300001600303490000600319520118800325100002501513700002401538700002201562700002501584700002401609700002301633856013101656 2016 eng d00aSpatially branched CdS-Bi2S3 heteroarchitecture: single step hydrothermal synthesis approach with enhanced field emission performance and highly responsive broadband photodetection0 aSpatially branched CdSBi2S3 heteroarchitecture single step hydro cSEP a95092-951000 v63 aThis report explores the controlled hierarchical synthesis of CdS nanostructure branches on Bi2S3 nanorod cores via a facile single step hydrothermal route. Morphological and structural studies reveal the formation of CdS-Bi2S3 heteroarchitecture with excellent stoichiometry between the constituent elements. The growth of CdS over Bi2S3 strongly depends on optimization of the reaction conditions, especially low PVP concentration. Furthermore, the as-synthesized CdS-Bi2S3 heteroarchitecture demonstrates multifunctionality in field emission and photoresponse. Interestingly, the CdS-Bi2S3 heteroarchitecture shows enhanced field emission properties such as low turn-on field (similar to 1.8 V mu m(-1) for 10 mu A cm(2)), high emission current density and better current stability in comparison to Bi2S3 and other nanostructures. The as-synthesized CdS-Bi2S3 heteroarchitecture exhibits considerable response and recovery times, similar to 207 ms and 315 ms, respectively in comparison to bare Bi2S3 nanostructures (similar to 655 ms and 678 ms). The present results demonstrate CdS-Bi2S3 heteroarchitecture as a potential candidate for future optoelectronic device applications.1 aBankar, Prashant, K.1 aPawar, Mahendra, S.1 aPawbake, Amit, S.1 aWarule, Sambhaji, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/spatially-branched-cds-bi2s3-heteroarchitecture-single-step-hydrothermal-synthesis-approach01976nas a2200169 4500008004100000245009500041210006900136260000800205300001400213490000600227520135800233100002201591700001801613700002401631700002401655856012701679 2016 eng d00aTemperature dependent raman spectroscopy and sensing behavior of few layer SnSe2nanosheets0 aTemperature dependent raman spectroscopy and sensing behavior of cOCT a5380-53870 v13 aTwo- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97% relative humidity (RH). The ob-served sensitivity of similar to 81% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.1 aPawbake, Amit, S.1 aDate, Abhijit1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-and-sensing-behavior-few-layer-snse2nanosheets01234nas a2200157 4500008004100000245011500041210006900156260000800225490000600233520061800239100002200857700002400879700002400903700002400927856012500951 2016 eng d00aTemperature dependent Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets0 aTemperature dependent Raman spectroscopy of electrochemically ex cAUG0 v63 aThe present investigation deals with temperature dependant Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets. The temperature dependent study illustrates that softening of the A(g)(1), B-2g and A(g)(2) modes occurs as the temperature increases from 78 K to 573 K. The calculated temperature coefficients for the A(g)(1), B-2g and A(g)(2) modes were found to be -0.028 cm(-1) K-1, -0.028 cm(-1) K-1 and -0.018 cm(-1) K-1 respectively. The observed phenomenon can be utilized for characterizing other emerging two-dimensional inorganic layered materials with atomic thickness.1 aPawbake, Amit, S.1 aErande, Manisha, B.1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-electrochemically-exfoliated-few-layer-black01991nas a2200229 4500008004100000245014100041210007000182260000800252490000600260520113500266100001901401700002201420700002501442700002701467700001901494700001801513700002401531700002201555700002301577700002401600856013701624 2017 eng d00aSynthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties0 aSynthesis of orthorhombicmolybdenum trioxide αMoO3 thin films by cJUL0 v13 aIn present work, we report synthesis of orthorhombic-molybdenum trioxide (α-MoO 3) thin films using home-build hot wire-CVD (HW-CVD) method simply by heating the Mo filament in a controlled O 2 atmosphere. The formation of α-MoO 3 was confirmed by low angle-XRD and Raman spectroscopy. Low angle-XRD analysis revealed that α-MoO 3 crystallites have orientations along (110), (101) and (111) directions while Raman spectroscopy analysis shows two prominent vibrational modes ~819 and ~994 cm −1 associated with Mo 2–O and Mo=O respectively. SEM and TEM analysis show the formation of nano-sheets like morphology of α-MoO 3 thin films. The SAED pattern shows highly crystalline nature of α-MoO 3. The humidity-sensing properties were investigated at room temperature by fabricating the two probe device. The humidity sensing results showed n-type behavior of α-MoO 3. The maximum humidity sensitivity of ~6957% along with response time of ~66 s and recovery time of ~5 s were observed for α-MoO 3 thin film humidity sensor device. Our results have opened up a new avenue to grow α-MoO 3 for humidity sensor applications.1 aJadkar, Vijaya1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aJadhavar, Ashok, Arjun1 aMayabadi, Azam1 aDate, Abhijit1 aLate, Dattatray, J.1 aPathan, Habib, M.1 aGosavi, Suresh, W.1 aJadkar, Sandesh, R. uhttps://library.ncl.res.in/content/synthesis-orthorhombic-molybdenum-trioxide-%CE%B1-moo3-thin-films-hot-wire-cvd-and-investigations02134nas a2200277 4500008004100000022001200041245010700053210006900160260000900229300001200238490000700250520121100257653001301468653001801481653001101499653002801510653002301538100002201561700001901583700002501602700002401627700002701651700002601678700002401704856012801728 2018 eng d a925963500aTemperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets0 aTemperature and pressure dependent Raman spectroscopy of plasma  cAPR  a146-1560 v843 a

Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G′ bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.

10agraphene10ahigh pressure10aPhonon10aPlasma treated graphene10aRaman spectroscopy1 aPawbake, Amit, S.1 aMishra, K., K.1 aMachuno, Luis, G. B.1 aGelamo, Rogerio, V.1 aRavindranathan, T., R.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-and-pressure-dependent-raman-spectroscopy-plasma-treated-multilayer-graphene02932nas a2200241 4500008004100000022001400041245009600055210006900151260000800220300001000228490000800238520213400246653002002380653001502400653001502415653001902430100002502449700002202474700002302496700002402519700002202543856012502565 2019 eng d a0925-400500aSuperior humidity sensor and photodetector of mesoporous ZnO nanosheets at room temperature0 aSuperior humidity sensor and photodetector of mesoporous ZnO nan cAUG a83-920 v2933 a

Miniaturized sensor technology is vastly demanding multifunctional materials to fulfill many requirements simultaneously; instead of integrating various sensors into a single device. Efficient operation of these miniaturized sensors at room temperature is highly feasible and cost-effective. The humidity sensing and photodetection is precise merit of sensing in special usage like artificial skin. Sensitivity enhancement in both humidity and photodetection required the high surface area for adsorption as well as a high charge transfer mechanism. The two dimensional (2D) zinc oxide nanosheets (ZnO NS) is the ultimate structure for dimensionally confined transport properties owing to the specific surface atomic configuration that results in high sensitivity, low operating temperature, fast response and recovery, and improved selectivity. Furthermore, introducing porosity into 2D nanostructures has opened new opportunities to enhance the efficiency of sensors and detectors via increasing large surface area and tunable physical and chemical properties. Here we report preparation of mesoporous and highly crystalline 2D ZnO NS by a single step, template free, cost-effective chemical method. The structural and morphological characterizations of ZnO NS are carried out using XRD, FESEM, XPS, TEM respectively. The high-resolution TEM images emphasize sheet-like morphology with a thickness of around 18-22 nm. Further the mesoporous ZnO NS (MZNS) with the pore size between 5-10 nm are achieved by simple heat-treatment. XPS and PL study is confirming the oxygen deficiency in MZNS. The MZNS exhibits an excellent responsivity than PZNS with a fast response and rapid recovery time of 25 s and 5 s respectively along with good cyclic stability which is highly crucial for smart humidity sensor. Furthermore, it considerably enhances photo-sensor performance than pristine ZnO NS (PZNS) with (similar to)1 s response time as well as (similar to)1 s recovery time along with better stability. These promising results illustrate the great potential of MZNS for next-generation humidity sensors and photodetectors.

10ahumidity sensor10aMesoporous10ananosheets10aPhoto-detector1 aGupta, Shobhnath, P.1 aPawbake, Amit, S.1 aSathe, Bhaskar, R.1 aLate, Dattatray, J.1 aWalke, Pravin, S. uhttps://library.ncl.res.in/content/superior-humidity-sensor-and-photodetector-mesoporous-zno-nanosheets-room-temperature02598nas a2200337 4500008004100000245008900041210006900130260000800199300001000207490000600217520154200223653002201765653001901787653001501806653001501821653000901836100002201845700002301867700002301890700002001913700001901933700002001952700002301972700002001995700001802015700002302033700003102056700003002087700002402117856011902141 2023 eng d00aTitanium trisulfide nanosheets and nanoribbons for field emission- based nanodevices0 aTitanium trisulfide nanosheets and nanoribbons for field emissio cJAN a44-490 v63 a

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of similar to 0.3 V/ mu m, required for drawing an emission current density of similar to 10 mu A/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of similar to 0.9 mA/ cm2 at a relatively low applied electric field of similar to 0.4 V/mu m. We have estimated the values of the field enhancement factor (beta), which are found to be similar to 5 x 104 for the TiS3 nanosheet emitter and similar to 4 x 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of beta. In fact, the nanosheet sample presents a higher density of ultrathin layers (similar to 12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are similar to 19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices.

10aCurrent stability10afield emission10ananoribbon10ananosheets10aTiS31 aPawbake, Amit, S.1 aKhare, Ruchita, T.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, R.1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aPawar, Mahendra1 aFrank, Otakar1 aMore, Mahendra, A.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/titanium-trisulfide-nanosheets-and-nanoribbons-field-emission-based-nanodevices