01942nas a2200229   4500008004100000022001400041245007000055210006600125260007300191300001200264490000800276520119900284653001501483653002201498653000801520653001101528653001801539653001701557653002201574100001801596856009801614       2006                        eng d  a0927-775700aAdsorption of octadecyltrichlorosilane on Si(100)/SiO2 and SBA-150 aAdsorption of octadecyltrichlorosilane on Si100SiO2 and SBA15  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcOCT  a133-1400 v2893 a<p>Adsorption of octadecyltrichlorosilane (OTS) on Si(100)/SiO2 substrate and mesoporous SBA-15 has been studied by energy dispersive X-ray analysis (EDAX), Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). Contact angle technique is used to study the adsorption kinetics of OTS on Si(100)/SiO2 and thermal stability of adsorbed OTS layer. Thermogravirnetric (TGA) technique is employed to understand the thermal behavior of OTS adlayer on SBA-15. Langmuir isotherms fit very well with OTS adsorption kinetics data on Si(100)/SiO2 and furnish adsorption rate constant, k(a) = 236 M-1 s(-1), desorption rateconstant, k(d) = 0.0082s(-1) and Gibbs free energy of adsorption, Delta G(ads) = -6.28 kcal mol(-1). EDAX and XPS results both show increased carbon content due to OTS adsorption and decreased oxygen and silicon content due to screening of these elements by OTS adlayer. FTIR data shows methylene (-CH2) and methyl (-CH3) stretching bands, in close agreement with reported data. The OTS layers are found to be thermally. stable up to a temperature of approximate to 260 degrees C on both Si(100)/SiO2 and SBA-15. (c) 2006 Elsevier B.V. All rights reserved.</p>10aAdsorption10aGibbs free energy10aOTS10aSBA-1510aSelf-assembly10aSi(100)/SiO210athermal stability1 aMirji, S., A.  uhttps://library.ncl.res.in/content/adsorption-octadecyltrichlorosilane-si100sio2-and-sba-15-0