02145nas a2200265   4500008004100000022001400041245015500055210006900210260000800279300001400287490000700301520116100308653002601469653003001495653003501525653003501560653003301595100002601628700002001654700002201674700001801696700002201714700001801736856012501754       2019                        eng d  a0018-938300aIn situ study of radiation stability and associated conduction mechanisms of Nb-Doped TiO2/p-Si heterojunction diode under swift heavy ion irradiation0 aIn situ study of radiation stability and associated conduction m  cMAR  a1475-14810 v663 a<p>In situ current-voltage characteristics of Nb-doped TiO2/p-Si-based heterojunction diode have been studied under dense electronic excitations of 84-MeV Si6+ ions. The diode parameters such as ideality factor (eta), barrier height (phi(B)), reverse saturation current (J(s)), and series resistance (R-s) are found to be a strong function of ion irradiation fluence. The observed anomalies of fluence dependence of barrier height and ideality factor are explained in terms of irradiation-induced created defects complexes, modification of interface states and structural properties of Nbdoped-TiO2 (NTO) layer. Several mechanisms suchas barrier height inhomogeneity, donor defects-induced enchantment in n-NTO layer conductivity, and various current conduction mechanisms involved at different voltage ranges are discussed as a function of fluence with the help of constructed energy band diagram. Such in situ studies on n-NTO/p-Si heterojunction diode under radiation harsh environment are very appropriate for the better understanding of heterojunction interface properties and make it suitable for use in aerospace industry and nuclear reactors.</p>
10aBarrier height tuning10an-NTO/p-Si heterojunction10aradiation stability of devices10asecondary electron irradiation10aspace-charge limited current1 aGautam, Subodh, Kumar1 aSingh, Jitendra1 aSingh, Ram, Gopal1 aGautam, Naina1 aTrivedi, Priyanka1 aSingh, Fouran  uhttps://library.ncl.res.in/content/situ-study-radiation-stability-and-associated-conduction-mechanisms-nb-doped-tio2p-si