01846nas a2200217   4500008004100000022001400041245010500055210006900160260000800229300001400237490000700251520109900258653002101357653002401378653002601402653001501428100002201443700001801465700001901483856012601502       2019                        eng d  a1533-488000aHydrothermal growth and humidity-dependent electrical properties of molybdenum disulphide nanosheets0 aHydrothermal growth and humiditydependent electrical properties   cAUG  a5158-51660 v193 a<p>In present investigation, we report humidity dependent electrical properties of molybdenum disulphide (MoS2) nanosheets. MoS2 nanosheets were prepared through a facile hydrothermal method with different reaction temperatures. The as-synthesized MoS2 nanosheets were characterized with XRD, SEM, TEM, and Raman spectroscopy, which confirmed successful preparation and rationality. Further, the humidity dependent electrical properties against relative humidity (RH) of these samples were carried out at room temperature. The results evinced that the sensors film fabricated with MoS2 nanosheets prepared at temperature 220 degrees C exhibited better performance compared to the nanosheets synthesized at 180 degrees C and 200 degrees C temperature. The RH sensing results exhibits highly sensitive, ultrafast response/recovery behaviour and outstanding repeatability than reported earlier. The excellent humidity sensing properties of the resultant MoS2 nanosheets was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications.</p>10aHumidity sensors10aHydrothermal method10aMolybdenum Disulphide10ananosheets1 aShelke, Nitin, T.1 aKarle, S., C.1 aKarche, B., R.  uhttps://library.ncl.res.in/content/hydrothermal-growth-and-humidity-dependent-electrical-properties-molybdenum-disulphide01575nas a2200169   4500008004100000022001400041245006100055210006100116260000800177300001600185490000700201520104500208100002201253700001801275700001901293856009301312       2020                        eng d  a0957-452200aPhotoresponse properties of CdSe thin film photodetector0 aPhotoresponse properties of CdSe thin film photodetector  cSEP  a15061-150690 v313 a<p>In the present investigation, the performance of highly sensitive photodetector based on CdSe thin film has been demonstrated. The cadmium selenide (CdSe) films were deposited successfully by spray pyrolysis method on glass substrate. The as-deposited films were used as visible light detector. Further, the structural, morphological, and optical properties of CdSe films were investigated through X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy, and optical absorption spectrophotometer. The XRD studies show that the produced samples are polycrystalline in nature. A UV-Visible absorbance spectrum indicates direct allowed transition with bandgap about 1.75 eV. The SEM micrographs depict uniformly distributed well defined uneven hexagonal grains. The CdSe film-based photodetector exhibits high responsivity, detectivity and shows an ultrafast photoresponse. The excellent photoresponse and high photosensitivity of CdSe film makes it a strong candidate for high-performance photodetectors.</p>
1 aShelke, Nitin, T.1 aKarle, S., C.1 aKarche, B., R.  uhttps://library.ncl.res.in/content/photoresponse-properties-cdse-thin-film-photodetector