02342nas a2200265   4500008004100000022001400041245006100055210006000116260009200176300001200268490000600280520146300286653001901749653002601768653001901794653000801813100002401821700002601845700002201871700002201893700002001915700002301935700002301958856009501981       2009                        eng d  a1662-525000aField emission properties of Al-doped ZnO nanostructures0 aField emission properties of Aldoped ZnO nanostructures  aLAUBISRUTISTR 24, STAFA-ZUERICH, CH-8712, SWITZERLANDbTRANS TECH PUBLICATIONS LTDcJAN  a231-2370 v53 a<p>Field emission from Al-doped ZnO nanostrcutures has been investigated in planar diode configuration under ultra high vacuum conditions. The Al-doped ZnO nanostructures were synthesized by co-precipitation method with varying aluminium concentrations. The as- synthesized product was characterized by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The threshold field required to draw a current density of similar to 1 mu A/cm(2) was observed to be similar to 2.0 V/mu m and similar to 2.3 V/mu m for Al-doped ZnO nanostructures synthesized with aluminium concentrations of 1% and 3%, respectively. The Fowler- Nordheim (F-N) plots for both the specimens exhibit non-linear behaviour, which is observed to be specimen dependent. The nonlinearity observed in the F-N plots has been interpreted on the basis of the theory of electron emission from semiconductor emitters. The field enhancement factors, estimated from the slope of the F-N plots, are found to be similar to 9.3 x 10(3) and 3.9 x 10(3) for 1% and 3% Al-doped ZnO emitters, respectively. The high values of the field enhancement factor Suggest that the emission is from the nanostructures. The emission current stability measured at the preset value of similar to 2 mu A over a period of more than three hours is found to be fairly stable. The results indicate use of Al-doped ZnO nanostructures as promising emitters for field emission based devices.</p>10afield emission10aFowler-Nordheim plots10aNanostructures10aZnO1 aNavale, Shalaka, C.1 aSheini, Farid, Jamali1 aPatil, Sandip, S.1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aGosavi, Suresh, W.  uhttps://library.ncl.res.in/content/field-emission-properties-al-doped-zno-nanostructures-001602nas a2200253   4500008004100000022001400041245010500055210006900160260007100229300001400300490000600314520069700320653001901017653002501036653001901061653001701080653000801097100002601105700002301131700002001154700002201174700003001196856012201226       2010                        eng d  a1936-085100aFowler-nordheim plot behavior and mechanism of field electron emission from ZnO tetrapod structures	0 aFowlernordheim plot behavior and mechanism of field electron emi  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcOCT  a5585-55900 v43 a<p>Field emission measurements of current-voltage characteristics are reported for tetrapod structures of ZnO. The nonlinear Fowler-Nordheim (FN) plot is analyzed according to a model of calculation based on saturation of conduction band current and predominance of valence band current at high-field values. The simulated FN plot exhibits similar features to those observed experimentally. The model of calculation suggests that the slope variation of the FN plot, in the high-field and low-field regions, does not depend on the magnitude of saturation. Instead, it is a characteristic of the energy band structure and voltage-to-barrier-field conversion factor of the emitting material.</p>10afield emission10aFowler-Nordheim plot10aNanostructures10anonlinearity10aZnO1 aAl-Tabbakh, Ahmed, A.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/fowler-nordheim-plot-behavior-and-mechanism-field-electron-emission-zno-tetrapod-001785nas a2200301   4500008004100000022001400041245006700055210006600122260007700188300001400265520077300279653003601052653001901088653002201107653001901129653001101148653001301159100002601172700002301198700002301221700002001244700002301264700002701287700002301314700002101337700002401358856010101382       2014                        eng d  a1434-194800aMetallic few-layer flowerlike VS2 nanosheets as field emitters0 aMetallic fewlayer flowerlike VS2 nanosheets as field emitters  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcNOV  a5331-53363 a<p>We report first-principles DFT calculations of the single-layer VS2 work function, the experimental synthesis of flower-like few-layer-thick VS2 nanosheets by a simple one-step hydrothermal method, and the investigation of their field emission properties. The turn-on field required to draw emission current densities of 1 and 10 mu A/cm(2) were 4 and 5.01 V/mu m, respectively. The observed turn-on field values are attributed to the high field enhancement factor (ca. 2500), which is due to presence of sharp protrusions in the VS2 nanosheets. Furthermore, the field-emission current stability of the VS2 emitter shows stable behavior over a period of 12 h. Further, DFT calculations show that the work function (f) of the single-layer VS2 emitter is 6.01 eV.</p>10aDensity functional calculations10afield emission10aLayered compounds10aNanostructures10aSulfur10aVanadium1 aRout, Chandra, Sekhar1 aKhare, Ruchita, T.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aLanzillo, Nicholas, A.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/metallic-few-layer-flowerlike-vs2-nanosheets-field-emitters-0