01820nas a2200241   4500008004100000022001400041245007300055210006900128260009000197300000900287490000600296520096100302100002601263700002601289700002301315700002001338700002301358700002201381700002301403700002101426700002401447856010701471       2013                        eng d  a2045-232200aSuperior field emission properties of layered WS2-RGO nanocomposites0 aSuperior field emission properties of layered WS2RGO nanocomposi  aMACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLANDbNATURE PUBLISHING GROUPcNOV  a32820 v33 a<p>We report here the field emission studies of a layered WS2-RGO composite at the base pressure of similar to 1 x 10(-8) mbar. The turn on field required to draw a field emission current density of 1 mu A/cm(2) is found to be 3.5, 2.3 and 2 V/mu m for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of similar to 800 mu A/cm(2) is drawn at an applied field of 4.1 V/mu m from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.</p>1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/superior-field-emission-properties-layered-ws2-rgo-nanocomposites-002123nas a2200241   4500008004100000022001400041245008600055210006900141260012500210300001100335490000800346520120400354100002601558700002601584700002301610700002001633700002301653700002201676700002301698700002101721700002401742856011501766       2014                        eng d  a0003-695100aEnhanced field emission properties of doped graphene nanosheets with layered SnS20 aEnhanced field emission properties of doped graphene nanosheets   aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUL  a0431090 v1053 a<p>We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 mu A/cm(2) is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/mu m) compared to pristine SnS2 (4.8 V/mu m) nanosheets. The field enhancement factor beta (similar to 3200 for the SnS2 and similar to 3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowering of the work function of SnS2 when supported by graphene, which is in response to p-type doping of graphene. (C) 2014 AIP Publishing LLC.</p>1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/enhanced-field-emission-properties-doped-graphene-nanosheets-layered-sns2-002794nas a2200265   4500008004100000020002200041245011500063210006900178260019300247520172400440653001902164653002102183653001902204100002602223700002002249700002702269700002402296700001502320700001602335700001602351700001402367700001602381700001402397856011702411       2014                        eng d  a978-1-4799-5306-600aPhotosensitive field emission study of SnS2 nanosheets (27th International Vacuum Nanoelectronics Conference )0 aPhotosensitive field emission study of SnS2 nanosheets 27th Inte  a345 E 47TH ST, NEW YORK, NY 10017 USAbPaul Scherrer Inst; EMPA, Mat Sci & Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices SoccJUL3 a<p>SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to Field Emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solution are used. The FE study is carried out in all metal Ultra High Vacuum (UHV) chamber in planar diode configuration at a base pressure of similar to 10(-8) torr. A maximum current density of 110 mu A/cm(2) was attainable. The turn on field required to draw a current density of 1 mu A/cm(2) is found to be 2.6 V/mu m. A separate study was carried out to investigate the photosensitivity of the emitter by illuminating the specimen under visible light. In dark, the FN plot is non-linear, indicative of semiconductor nature of the emitter. However, on illumination, the FN plot is observed to be linear. This remarkable change can be explained by the photoconductivity imparted on illumination. The field at the tip is high in presence of light, than in dark, due to enhanced conductivity. It is also observed that on switching ON the light, the FE current increases almost instantaneously. Repetitive switching is observed at a fixed applied voltage, generating current pulses. The visible light soaking of the sample is carried out by illuminating the lamp for more than 100 minutes, where the current seems to saturate. On switching off the lamp the emission current decayed almost to its initial value exponentially. The photosensitivity has been studied for different wavelengths in the visible spectra. The maximum photosensitive field emission is observed for green filter. With this photoresponse, it is envisaged that SnS2 nanosheets are a potential candidate for optoelectronic applications of field emitters.</p>
10afield emission10aphotosensitivity10aPhotoswitching1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aRout, Chandra, Shekhar1 aLate, Dattatray, J.1 aTsujino, S1 aGobrecht, J1 aParaliev, M1 aBraun, HH1 aGroening, O1 aFeurer, T  uhttps://library.ncl.res.in/content/photosensitive-field-emission-study-sns2-nanosheets-27th-international-vacuum01872nas a2200181   4500008004100000022001400041245005900055210005900114260009900173300002700272490000700299520119400306100002601500700002001526700002701546700002401573856009301597       2015                        eng d  a1071-102300aPhotosensitive field emission study of SnS2 nanosheets0 aPhotosensitive field emission study of SnS2 nanosheets  aSTE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USAbA V S AMER INST PHYSICScMAY  aArticle Number: 03C1060 v333 a<p>SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to field emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solutions are used. The FE study is carried out in a planar diode configuration at a base pressure of similar to 10(-8) mbar. The emission photosensitivity is also investigated by illuminating the specimen with a visible light source. In dark, the turn on field, the electric field required to obtain a current density of 1 mu A/cm(2), is found to be 5.9 V/mu m. Upon illumination, the emitter with visible light, it is found to reduce to 5.0 V/mu m. A significant change in the nature of the Fowler-Nordheim plot with light illumination is also observed and has been explained on the basis of photoconductivity. Repetitive switching ON and OFF the light source, at a fixed applied voltage, is found to generate current pulses. The photosensitivity is also studied with various color filters. With the photoswitching and the enhanced field emission properties, it is envisaged that SnS(2)NSs possess a potential for optoelectronic applications of field emitters. (C) 2014 American Vacuum Society.</p>1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aRout, Chandra, Shekhar1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/photosensitive-field-emission-study-sns2-nanosheets-201240nas a2200169   4500008004100000245006500041210006400106260000800170300002700178490000700205520067100212100002600883700002000909700002400929700002200953856009500975       2017                        eng d00aNonlinear Fowler-Nordheim behavior of a single SnO2 nanowire0 aNonlinear FowlerNordheim behavior of a single SnO2 nanowire  cMAR  aArticle Number: 02C1050 v353 aThe present work deals with the field emission study on multiple SnO2 nanowires synthesized by a simple thermal evaporation method. The randomly oriented multiple nanowires grown by the vapor-liquid-solid mechanism exhibit low turn on field (0.8V/mu m defined for the current density of 1 mu A/cm(2)) and linear Fowler-Nordheim nature (FN). However, for the understanding of the nature of the FN plot, field emission behavior of a single SnO2 nanowire is investigated. The FN plot is observed to be nonlinear in nature. A simple model explaining the field emission mechanism from the semiconducting single SnO2 nanowire is proposed. (C) 2017 American Vacuum Society.1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aLate, Dattatray, J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/nonlinear-fowler-nordheim-behavior-single-sno2-nanowire