02179nas a2200193   4500008004100000245011300041210006900154260000800223300001400231490000700245520148200252100002401734700002101758700002301779700001601802700002001818700002201838856012501860       2018                        eng d00aElectrochemically synthesized faceted CuInTe2 nanorods as an electron source for field emission applications0 aElectrochemically synthesized faceted CuInTe2 nanorods as an ele  cAPR  a5284-52940 v423 aHerein, CuInTe2 (CIT) thin films with faceted nanorod-like morphology have been synthesized on a flexible molybdenum foil using a water-based low-cost electrodeposition technique. The co-deposition potential for CIT was optimized using cyclic voltammetry with respect to that of the Ag/AgCl reference electrode, and films were deposited from -0.6 V to -0.9 V at the working temperature of 75 degrees C. The as-prepared CIT films exhibited an amorphous nature, whereas the RTP-annealed films exhibited a highly crystalline chalcopyrite nature as a function of the growth potential. A red shift was observed in the Raman spectra of the as-deposited films that shifted towards the original position upon annealing. The Cu/In ratio obtained by the EDS analysis was found to decrease systematically upon increasing the growth potential. X-ray photoelectron spectroscopy (XPS) studies revealed the presence of Cu+, Cu2+ satellites, In3+, Te2-, and Te4+ states of Cu, In, and Te. The field emission study showed a maximum current density of 1.74 mA cm(-2), which was attainable at an applied electric field of 1.5 V mu m(-1). The turn-on field was found to be 0.92 V mu m(-1), comparable to that of the carbon nanofibres. The emitter exhibited stable electron emission over a period of 3 hours. The faceted CIT nanorods with columnar growth are a potential candidate for application as an electron source, and herein, the field emission of CIT nanorods is reported for the first time.1 aLakhe, Manorama, G.1 aJoshi, Padmshree1 aChoudhary, Ram, J.1 aGanesan, V.1 aJoag, Dilip, S.1 aChaure, Nandu, B.  uhttps://library.ncl.res.in/content/electrochemically-synthesized-faceted-cuinte2-nanorods-electron-source-field-emission02348nas a2200157   4500008004100000022001400041245008500055210006900140260000800209300001400217490000800231520179500239100002402034700002202058856011002080       2018                        eng d  a0361-523500aTransport properties of cuinte2 thin films obtained by the electrochemical route0 aTransport properties of cuinte2 thin films obtained by the elect  cDEC  a7099-71050 v 473 auInTe2 (CIT) thin films were potentiostatically electrodeposited onto cadmium sulfide thin films coated on fluorine doped tin oxide (FTO) glass in an aqueous bath at 75 degrees C by the standard three-electrode system at -0.7 V and -0.8 V, with respect to an Ag/AgCl reference electrode. The electrodeposited layers were heat treated at similar to 80 degrees C in air ambient for 60 min. X-ray diffraction pattern and Raman analysis confirmed the formation of chalcopyrite CIT thin films upon heat treatment. The optical band gap of heat treated CIT films was found to be similar to 1.0 eV and 0.95 eV deposited at -0.7 V and -0.8 V, respectively. Compact and good adhesive growth of CIT layers onto CdS coated FTO substrates is confirmed by field emission scanning electron microscopy. The current density-voltage (J-V) and capacitance-voltage (C-V) measurement was studied to understand the electronic quality of material for development of CIT layers for solar cell applications. The current density was found to be increased by two orders of magnitude upon low-temperature heat treatment. The capacitance-voltage measurement showed sharp depletion and accumulation region. The built in potential was found to be similar to 60 mV and 145 mV in the as-deposited samples, deposited at -0.7 V and -0.8 V, respectively, whereas upon heat treatment it shifted to 159 mV and 210 mV. The capacitance of the CIT films was found to be a function of applied bias and increased with increasing the bias voltage. The depletion width of the heat treated sample was found to be similar to 20 nm and 200 nm for the sample deposited at -0.7 V and -0.8 V, respectively. Thus, the sample deposited at -0.8 V shows optimum electronic properties and is found to be suitable for opto-electronic applications.1 aLakhe, Manorama, G.1 aChaure, Nandu, B.  uhttps://library.ncl.res.in/content/transport-properties-cuinte2-thin-films-obtained-electrochemical-route