02150nas a2200253   4500008004100000022001400041245011200055210006900167260005700236300001400293490000700307520127000314653002801584653002401612653000901636653001301645653002101658100001501679700001901694700001801713700002001731700002401751856012101775       2013                        eng d  a0959-399300aProduction, purification and characterization of cholesterol oxidase from a newly isolated streptomyces sp.0 aProduction purification and characterization of cholesterol oxid  a233 SPRING ST, NEW YORK, NY 10013 USAbSPRINGERcNOV  a2077-20850 v293 a<p>Cholesterol oxidase production (COD) by a new isolate characterized as Streptomyces sp. was studied in different production media and fermentation conditions. Individual supplementation of 1 % maltose, lactose, sucrose, peptone, soybean meal and yeast extract enhanced COD production by 80-110 % in comparison to the basal production medium (2.4 U/ml). Supplementation of 0.05 % cholesterol (inducer) enhanced COD production by 150 %. COD was purified 14.3-fold and its molecular weight was found to be 62 kDa. V-max (21.93 mu M/min mg) and substrate affinity K-m (101.3 mu M) suggested high affinity of the COD for cholesterol. In presence of Ba2+ and Hg2+ the enzyme activity was inhibited while Cu2+ enhanced the activity nearly threefold. Relative activity of the enzyme was found maximum in triton X-100 whereas sodium dodecyl sulfate inactivated the enzyme. The enzyme activity was also inhibited by the thiol-reducing reagents like Dithiothreitol and beta-mercaptoethanol. The COD showed moderate stability towards all organic solvents except acetone, benzene and chloroform. The activity increased in presence of isopropanol and ethanol. The enzyme was most active at pH 7 and 37 A degrees C temperature. This organism is not reported to produce COD.</p>10aAffinity chromatography10aCholesterol oxidase10aHPLC10aSDS PAGE10aStreptomyces sp.1 aNiwas, Ram1 aSingh, Vineeta1 aSingh, Rajbir1 aTripathi, Divya1 aTripathi, C., K. M.  uhttps://library.ncl.res.in/content/production-purification-and-characterization-cholesterol-oxidase-newly-isolated-002384nas a2200217   4500008004100000022001400041245011100055210006900166260009000235300002600325490000600351520153400357100001901891700002101910700002001931700001901951700002301970700001801993700002402011856013102035       2015                        eng d  a2045-232200aIsolation, characterization and antifungal docking studies of wortmannin isolated from penicillium radicum0 aIsolation characterization and antifungal docking studies of wor  aMACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLANDbNATURE PUBLISHING GROUPcJUL  aArticle Number: 119480 v53 a<p>During the search for a potent antifungal drug, a cell-permeable metabolite was isolated from a soil isolate taxonomically identified as Penicillium radicum. The strain was found to be a potent antifungal agent. Production conditions of the active compound were optimized and the active compound was isolated, purified, characterized and identified as a phosphoinositide 3-kinase (PI3K) inhibitor, commonly known as wortmannin (Wtmn). This is very first time we are reporting the production of Wtmn from P. radicum. In addition to its previously discovered anticancer properties, the broad spectrum antifungal property of Wtmn was re-confirmed using various fungal strains. Virtual screening was performed through molecular docking studies against potential antifungal targets, and it was found that Wtmn was predicted to impede the actions of these targets more efficiently than known antifungal compounds such as voriconazole and nikkomycin i.e. 1) mevalonate-5-diphosphate decarboxylase (1FI4), responsible for sterol/isoprenoid biosynthesis; 2) exocyst complex component SEC3 (3A58) where Rho-and phosphoinositide-dependent localization is present and 3) Kre2p/Mnt1p a Golgi alpha1,2-mannosyltransferase (1S4N) involved in the biosynthesis of yeast cell wall glycoproteins). We conclude that Wtmn produced from P. radicum is a promising lead compound which could be potentially used as an efficient antifungal drug in the near future after appropriate structural modifications to reduce toxicity and improve stability.</p>1 aSingh, Vineeta1 aPraveen, Vandana1 aTripathi, Divya1 aHaque, Shafiul1 aSomvanshi, Pallavi1 aKatti, S., B.1 aTripathi, C., K. M.  uhttps://library.ncl.res.in/content/isolation-characterization-and-antifungal-docking-studies-wortmannin-isolated-penicillium-102316nas a2200145   4500008004100000245007000041210006900111260001300180490000900193520180900202100001902011700002402030700001702054856009902071       2020                        eng d00aSpectroscopic probe of atomically thin domains of CVD-grown MoSe20 aSpectroscopic probe of atomically thin domains of CVDgrown MoSe2  bAIPcNOV0 v22653 a<div class="hlFld-Abstract" style="font-family: Lora, serif; font-size: 20px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400;"><div class="NLM_paragraph" style="margin-bottom: 13px;"><span style="font-size:14px;"><span style="font-family:georgia,serif;">Since the discovery of graphene, two-dimensional Layered Transition Metal Dichalcogenides (TMDCs) such as MoS<span style="line-height: 0; position: relative; bottom: -0.25em;">2</span>, MoSe<span style="line-height: 0; position: relative; bottom: -0.25em;">2</span>, and WS<span style="line-height: 0; position: relative; bottom: -0.25em;">2</span>&nbsp;having a tunable bandgap, have emerged as one of the most stable classes of materials making them attractive for various applications. We have investigated the growth mechanism and shape evolution of various domains of CVD-grown MoSe<span style="line-height: 0; position: relative; bottom: -0.25em;">2</span>&nbsp;on insulating substrates by spectroscopic techniques. The different morphologies were analyzed using Raman and photoluminescence spectroscopies. The transformation from the precursor MoO<span style="line-height: 0; position: relative; bottom: -0.25em;">3</span>&nbsp;to MoSe<span style="line-height: 0; position: relative; bottom: -0.25em;">2</span>&nbsp;is found to depend on a number of growth parameters and experimental conditions.</span></span></div></div><div class="article-paragraphs" style="font-family: Lora, serif; font-size: 20px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400;"><div class="sectionInfo"><h4 class="refHeading" style="font-size: 24px; line-height: 32px; text-transform: uppercase; font-family: Montserrat, sans-serif;">&nbsp;</h4></div></div><p>&nbsp;</p>1 aSingh, Vineeta1 aLate, Dattatray, J.1 aRath, Shyama  uhttps://library.ncl.res.in/content/spectroscopic-probe-atomically-thin-domains-cvd-grown-mose201861nas a2200169   4500008004100000022001400041245011800055210006900173260000800242300001100250490000700261520123200268100001901500700002401519700001701543856013101560       2020                        eng d  a0734-210100aTunable light emission from chemical vapor deposited two-dimensional MoSe2 by layer variation and S incorporation0 aTunable light emission from chemical vapor deposited twodimensio  cMAR  a0234020 v383 a<p>Mono- and few-layer thick MoSe2 and MoSxSe2-x domains were grown on insulating SiO2/Si substrates by chemical vapor deposition. Scanning electron microscopy and optical contrast images were used to determine the domain size and morphology. The structure, crystallinity, and the thickness (number of layers) of the as-synthesized domains were determined from Raman spectroscopy. The light emission was determined from photoluminescence (PL) spectroscopy. The PL emission started appearing only in domains having four layers or less, with the intensity increasing as the number of layers decreased. The PL peak position varied between 1.48eV (similar to 838nm) for four layers to 1.55eV (similar to 800nm) in the monolayer limit. Sulfur incorporation was done to enable a further tunability of the bandgap. The monolayer bandgap changed from 1.55eV for MoSe2 to 1.64eV (similar to 756nm) for MoS0.32Se0.68. The other effect of S incorporation was the formation of larger area domains in the alloy as compared to binary MoSe2 with an improvement in the structural properties, thus providing a pathway to improve the properties of two-dimensional semiconductors by mixing of two materials with similar atomic arrangements.</p>
1 aSingh, Vineeta1 aLate, Dattatray, J.1 aRath, Shyama  uhttps://library.ncl.res.in/content/tunable-light-emission-chemical-vapor-deposited-two-dimensional-mose2-layer-variation-and-s