02037nas a2200193   4500008004100000245013800041210006900179260000800248300001600256490000600272520131300278100001901591700002801610700001801638700001601656700003001672700002101702856012001723       2016                        eng d00aSelenium-containing fused bicyclic heterocycle diselenolodiselenole: field effect transistorstudy and structure property relationship0 aSeleniumcontaining fused bicyclic heterocycle diselenolodiseleno  cJUL  a18222-182300 v83 aThe first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm(2) V-1 s(-1) with a transconductance of 9.2 mu S. This study correlate the effect of p-stacking, Se center dot center dot center dot Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.1 aDebnath, Sashi1 aChithiravel, Sundaresan1 aSharma, Sagar1 aBedi, Anjan1 aKrishnamoorthy, Kothandam1 aZade, Sanjio, S.  uhttps://library.ncl.res.in/content/selenium-containing-fused-bicyclic-heterocycle-diselenolodiselenole-field-effect