02066nas a2200217   4500008004100000022001400041245012400055210006900179260007300248300001200321490000800333520125700341653001801598653001601616653002901632653000801661653000801669100002601677700001801703856012701721       2014                        eng d  a1381-116900aResistance to ionic pt insertion in oxygen excess LaMnO3 perovskite lattices and its effect in water gas shift reaction0 aResistance to ionic pt insertion in oxygen excess LaMnO3 perovsk  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a534-5420 v3953 a<p>Pt doped and impregnated LaMnO3 perovskites are synthesized at different temperatures and Pt and Mn states are compared in an attempt to get insight into extent of lattice incorporation of Pt in perovskite. Various characterization studies indicate that oxygen excess system like LaMnO3 presents substantial resistance to B site doping with Pt. This behavior is different from other oxygen deficient perovskites like LaCoO3 and LaFeO3 in which lattice incorporation stabilizes the active species against sintering. Water gas shift reaction was used as a probe reaction to understand the effect of this difference in the activity. In case of LaMnO3, failure in lattice substitution leads to sintering and deactivation at high synthesis temperatures (&gt;= 700 degrees C) in both impregnated and doped samples. In doped samples, however, a strong interaction of Pt species with a persistent amorphous phase prevents sintering at lower synthesis temperature thereby enhancing the activity when compared to impregnated sample. The study reveals a possible mechanism in which only Pt(0) species is active with perovskite playing a minimal role in this system due to the resistance to lattice incorporation. (C) 2014 Elsevier B.V. All rights reserved.</p>10aOxygen excess10aPerovskites10aWater gas shift reaction10aXPS10aXRD1 aRajesh, Thattarathody1 aDevi, Nandini  uhttps://library.ncl.res.in/content/resistance-ionic-pt-insertion-oxygen-excess-lamno3-perovskite-lattices-and-its-effect-002041nas a2200253   4500008004100000022001400041245015600055210006900211260007300280300001000353490000800363520108600371653001901457653003501476653001801511653000801529653000801537100002901545700003201574700001801606700002201624700001801646856012301664       2016                        eng d  a1381-116900aPhotocatalytic H-2 evolution from water-methanol mixtures on InGaO3(ZnO)(m) with an anisotropic layered structure modified with CuO and NiO cocatalysts0 aPhotocatalytic H2 evolution from watermethanol mixtures on InGaO  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a82-880 v4153 a<p>InGaO3(ZnO)(m) series of oxides is found to be active for photocatalytic H-2 evolution from water-methanol mixtures. The structure of this series is highly anisotropic with InO6 octahedral layers sandwiching Ga/ZnOn polyhedra. The structural anisotropy in which the conducting layer is spatially separated from the charge generation sites may help in suppressing charge recombination and consequently enhance catalytic activity. The band gaps of the series obtained from absorption spectra are above 3.6 eV and hence they are not active under visible light irradiation. H-2 evolution is considerably enhanced under UV light on employing NiO as cocatalyst due to facile electron transfer from InGaO3(ZnO)(m). to NiO. However, when CuO is used as cocatalyst, visible light activity could be brought out. Due to the very low band gap of CuO, it can act as a sensitizer absorbing in visible light. The band positions become conducive for H-2 evolution due to band alignments consequent to electron accumulation in CuO conduction band. (C) 2016 Elsevier B.V. All rights reserved.</p>10aInGaO3(ZnO)(m)10aphotocatalytic water splitting10avisible light10aXPS10aXRD1 aNarendranath, Soumya, B.1 aThekkeparambil, Saranya, V.1 aGeorge, Leena1 aThundiyil, Shibin1 aDevi, Nandini  uhttps://library.ncl.res.in/content/photocatalytic-h-2-evolution-water-methanol-mixtures-ingao3znom-anisotropic-layered