01976nas a2200169   4500008004100000245009500041210006900136260000800205300001400213490000600227520135800233100002201591700001801613700002401631700002401655856012701679       2016                        eng d00aTemperature dependent raman spectroscopy and sensing behavior of few layer SnSe2nanosheets0 aTemperature dependent raman spectroscopy and sensing behavior of  cOCT  a5380-53870 v13 aTwo- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97% relative humidity (RH). The ob-served sensitivity of similar to 81% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.1 aPawbake, Amit, S.1 aDate, Abhijit1 aJadkar, Sandesh, R.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-and-sensing-behavior-few-layer-snse2nanosheets01701nas a2200229   4500008004100000245012700041210006900168260000800237300001200245490000800257520089500265100001801160700002101178700002001199700002101219700002001240700001801260700002401278700001801302700002001320856013101340       2016                        eng d00aWide band gap and conducting tungsten carbide(WC) thin films prepared by hot wire chemical vapor deposition(HW-CVD) method0 aWide band gap and conducting tungsten carbideWC thin films prepa  cNOV  a315-3170 v1833 a<p>In this letter, we report synthesis of tungsten carbide (WC) thin films having wide band gap(3.22-3.3 eV) with high electrical conductivity (80-1260 S/cm) by HW-CVD using heated using heated W filament and Tetra-fluoro-methane (CF4) gas. Formation of WC was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy. UV-Visible spectroscopy analysis revealed that the synthesized films have high transmission at wavelength 500 nm. Electrical properties measured using Hall measurement show that these films are semiconductor. The obtained results imply that the growth of WC thin films is mainly from the atomic species(W and C) evaporated from the hot filament. The HW-CVD opens a novel route to synthesize wide band gap and conducting WC at a cost-efficient way for DSSCs and hydrogen evolution reaction (HER). (C) 2016 Elsevier B. V. All rights reserved.</p>1 aPawbake, Amit1 aWaykar, Ravindra1 aJadhavar, Ashok1 aKulkarni, Rupali1 aWaman, Vaishali1 aDate, Abhijit1 aLate, Dattatray, J.1 aPathan, Habib1 aJadkar, Sandesh  uhttps://library.ncl.res.in/content/wide-band-gap-and-conducting-tungsten-carbidewc-thin-films-prepared-hot-wire-chemical-vapor01985nas a2200229   4500008004100000245010700041210006900148260000800217300002800225490000800253520119900261100001901460700001801479700002101497700002001518700001801538700002001556700001801576700001901594700002001613856012201633       2017                        eng d00aSynthesis of gamma-WO3 thin films by hot wire-CVD and investigation of its humidity sensing properties0 aSynthesis of gammaWO3 thin films by hot wireCVD and investigatio  cMAY  aArticle Number: 16007170 v2143 aIn this study, monoclinic tungsten oxide (gamma-WO3) have been grown in a single step using HW-CVD method by resistively heating W filaments in a constant O-2 pressure. The formation of gamma-WO3 was confirmed using low angle-XRD and Raman spectroscopy analysis. Low angle-XRD analysis revealed that as-deposited WO3 film are highly crystalline and the crystallites have preferred orientation along the (002) direction. HRTEM analysis and SAED pattern also show the highly crystalline nature of WO3 with d spacing of similar to 0.38 nm, having an orientation along the (002) direction. Surface topography investigated by SEM analysis shows the formation of a uniform and homogeneous cauliflower like morphology throughout the substrate surface without flaws and cracks. A humidity sensing device incorporating WO3 is also fabricated, which shows a maximum humidity sensitivity factor of similar to 3954% along with a response time of similar to 14 s and a recovery time of similar to 25 s. The obtained results demonstrate that it is possible to synthesize WO3 in a single step by HW-CVD method and to fabricate a humidity sensor by using it. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim1 aJadkar, Vijaya1 aPawbake, Amit1 aWaykar, Ravindra1 aJadhavar, Ashok1 aDate, Abhijit1 aLate, Dattatray1 aPathan, Habib1 aGosavi, Suresh1 aJadkar, Sandesh  uhttps://library.ncl.res.in/content/synthesis-gamma-wo3-thin-films-hot-wire-cvd-and-investigation-its-humidity-sensing01991nas a2200229   4500008004100000245014100041210007000182260000800252490000600260520113500266100001901401700002201420700002501442700002701467700001901494700001801513700002401531700002201555700002301577700002401600856013701624       2017                        eng d00aSynthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties0 aSynthesis of orthorhombicmolybdenum trioxide αMoO3 thin films by  cJUL0 v13 aIn present work, we report synthesis of orthorhombic-molybdenum trioxide (α-MoO 3) thin films using home-build hot wire-CVD (HW-CVD) method simply by heating the Mo filament in a controlled O 2 atmosphere. The formation of α-MoO 3 was confirmed by low angle-XRD and Raman spectroscopy. Low angle-XRD analysis revealed that α-MoO 3 crystallites have orientations along (110), (101) and (111) directions while Raman spectroscopy analysis shows two prominent vibrational modes ~819 and ~994 cm −1 associated with Mo 2–O and Mo=O respectively. SEM and TEM analysis show the formation of nano-sheets like morphology of α-MoO 3 thin films. The SAED pattern shows highly crystalline nature of α-MoO 3. The humidity-sensing properties were investigated at room temperature by fabricating the two probe device. The humidity sensing results showed n-type behavior of α-MoO 3. The maximum humidity sensitivity of ~6957% along with response time of ~66 s and recovery time of ~5 s were observed for α-MoO 3 thin film humidity sensor device. Our results have opened up a new avenue to grow α-MoO 3 for humidity sensor applications.1 aJadkar, Vijaya1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aJadhavar, Ashok, Arjun1 aMayabadi, Azam1 aDate, Abhijit1 aLate, Dattatray, J.1 aPathan, Habib, M.1 aGosavi, Suresh, W.1 aJadkar, Sandesh, R.  uhttps://library.ncl.res.in/content/synthesis-orthorhombic-molybdenum-trioxide-%CE%B1-moo3-thin-films-hot-wire-cvd-and-investigations