01552nas a2200217   4500008004100000245008600041210006900127260000800196300002700204490000800231520080500239100001901044700002301063700002401086700002101110700002401131700002101155700002401176700002101200856011301221       2013                        eng d00aBand-like transport in high mobility unencapsulated single-layer MoS2 transistors0 aBandlike transport in high mobility unencapsulated singlelayer M  cAPR  aArticle Number: 1731070 v1023 aUltra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.1 aJariwala, Deep1 aSangwan, Vinod, K.1 aLate, Dattatray, J.1 aJohns, James, E.1 aDravid, Vinayak, P.1 aMarks, Tobin, J.1 aLauhon, Lincoln, J.1 aHersam, Mark, C.  uhttps://library.ncl.res.in/content/band-transport-high-mobility-unencapsulated-single-layer-mos2-transistors