01456nas a2200217   4500008004100000245006000041210005900101260000800160300001400168490000600182520078800188100002300976700002400999700002201023700001801045700001601063700002001079700002301099700002401122856009201146       2013                        eng d00aEnhanced field-emission behavior of layered MoS2 sheets0 aEnhanced fieldemission behavior of layered MoS2 sheets  cAUG  a2730-27340 v93 aField emission studies are reported for the first time on layered MoS2 sheets at the base pressure of approximate to 1 x 10(-8) mbar. The turn-on field required to draw a field emission current density of 10 A/cm(2) is found to be 3.5 V/m for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (approximate to 1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.1 aKashid, Ranjit, V.1 aLate, Dattatray, J.1 aChou, Stanley, S.1 aHuang, Yi-Kai1 aDe, Mrinmoy1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aDravid, Vinayak, P.  uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mos2-sheets01939nas a2200253   4500008004100000245006500041210006400106260000800170300001400178490000600192520116700198100002401365700001801389700001301407700002101420700002801441700001601469700001601485700002001501700002401521700002401545700001901569856009701588       2013                        eng d00aSensing behavior of atomically thin-layered MoS2 transistors0 aSensing behavior of atomically thinlayered MoS2 transistors  cJUN  a4879-48910 v73 aMost of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light Irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.1 aLate, Dattatray, J.1 aHuang, Yi-Kai1 aLiu, Bin1 aAcharya, Jagaran1 aShirodkar, Sharmila, N.1 aLuo, Jiajun1 aYan, Aiming1 aCharles, Daniel1 aWaghmare, Umesh, V.1 aDravid, Vinayak, P.1 aRao, C., N. R.  uhttps://library.ncl.res.in/content/sensing-behavior-atomically-thin-layered-mos2-transistors