01638nas a2200181   4500008004100000245013200041210006900173260000800242490000600250520093800256100001801194700001801212700003001230700002401260700002001284700002101304856013101325       2014                        eng d00aIn situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3, arXiv preprint arXiv0 aIn situ characterisation of nanoscale electromechanical properti  cSEP0 v13 a<p>Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&amp;Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&amp;Os, and understanding the interactions of the atomic electronic states in such layered materials.</p>1 aWalia, Sumeet1 aNili, Hussein1 aBalendhran, Sivacarendran1 aLate, Dattatray, J.1 aSriram, Sharath1 aBhaskaran, Madhu  uhttps://library.ncl.res.in/content/situ-characterisation-nanoscale-electromechanical-properties-quasi-two-dimensional-mos2-and