01681nas a2200277   4500008004100000022001400041245007500055210006900130260012500199300001100324490000700335520070000342653001101042653001101053653002301064653002601087653002301113653002401136653001201160100002501172700002401197700002001221700002401241700002901265856010901294       2009                        eng d  a0003-695100aEnhanced nonvolatile resistive switching in dilutely cobalt doped TiO20 aEnhanced nonvolatile resistive switching in dilutely cobalt dope  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScNOV  a2035020 v953 a<p>Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.</p>10acobalt10aDoping10amagnetic switching10arandom-access storage10atitanium compounds10avacancies (crystal)10avalency1 aBogle, Kashinath, A.1 aBachhav, Mukesh, N.1 aDeo, Meenal, S.1 aValanoor, Nagarajan1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/enhanced-nonvolatile-resistive-switching-dilutely-cobalt-doped-tio2-002049nas a2200325   4500008004100000022001400041245014200055210006900197260012500266300002300391490000700414520071600421653003101137653003301168653002401201653003001225653002901255653002801284653004801312653003501360653003701395653002401432100002001456700002501476700002001501700001901521700002401540700002901564856013001593       2010                        eng d  a0003-695100aNanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film0 aNanoscale modulation of electronic states across unit cell steps  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUN  aArticle No. 2631080 v963 a<p>The nature of electronic states near the edge of unit cell steps on the surface of epitaxial La(0.7)Sr(0.3)MnO(3) (LSMO) thin films grown by real-time reflection high energy electron diffraction monitored pulsed laser deposition is examined by scanning tunneling microscopy and scanning tunneling spectroscopy techniques. It is observed that the electronic states are strongly modulated near the step edge with considerably high gap at the edge and low gap on the terrace. This modulation weakens at low temperature. The temperature evolution of the density of states and the nature of gap in deep metallic state of LSMO are also discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455886]</p>10acolossal magnetoresistance10aelectronic density of states10alanthanum compounds10amagnetic epitaxial layers10aNanostructured materials10apulsed laser deposition10areflection high energy electron diffraction10ascanning tunnelling microscopy10ascanning tunnelling spectroscopy10astrontium compounds1 aRana, Abhimanyu1 aBogle, Kashinath, A.1 aGame, Onkar, S.1 aPatil, Shankar1 aValanoor, Nagarajan1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/nanoscale-modulation-electronic-states-across-unit-cell-steps-surface-epitaxial-colossal-002036nas a2200301   4500008004100000022001400041245009900055210006900154260007700223300001400300490000700314520097200321653002201293653002401315653002901339653002001368653002101388100002501409700002001434700001901454700002201473700001901495700001801514700002001532700002901552700002401581856012901605       2012                        eng d  a1616-301X00aEpitaxial magnetic oxide nanocrystals via phase decomposition of bismuth perovskite precursors0 aEpitaxial magnetic oxide nanocrystals via phase decomposition of  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcDEC  a5224-52300 v223 a<p>The phase instability of bismuth perovskite (BiMO3), where M is a ferromagnetic cation, is exploited to create self-assembled magnetic oxide nanocrystal arrays on oxide supports. Conditions during pulsed laser deposition are tuned so as to induce complete breakdown of the perovskite precursor into bismuth oxide (Bi2O3) and metal oxide (M-Ox) pockets. Subsequent cooling in vacuum volatizes the Bi2O3 leaving behind an array of monodisperse nanocrystals. In situ reflective high energy electron diffraction beam is exploited to monitor the synthesis in real-time. Analysis of the patterns confirms the phase separation and volatization process. Successful synthesis of M-Ox, where M = Mn, Fe, Co, and Cr, is shown using this template-free facile approach. Detailed magnetic characterization of nanocrystals is carried out to reveal the functionalities such as magnetic anisotropy as well as larger than bulk moments, as expected in these oxide nanostructures.</p>10aBi2O3 evaporation10abismuth perovskites10aepitaxial nanostructures10amagnetic oxides10aphase separation1 aBogle, Kashinath, A.1 aCheung, Jeffrey1 aChen, Yong-Lun1 aLiao, Sheng-Chieh1 aLai, Chih-Hung1 aChu, Ying-Hao1 aGregg, John, M.1 aOgale, Satishchandra, B.1 aValanoor, Nagarajan  uhttps://library.ncl.res.in/content/epitaxial-magnetic-oxide-nanocrystals-phase-decomposition-bismuth-perovskite-precursors-001894nas a2200241   4500008004100000022001400041245009000055210006900145260007700214300001400291490000700305520103300312100002001345700001601365700002501381700001401406700002001420700002001440700002201460700002501482700002401507856012101531       2014                        eng d  a1616-301X00aScaling behavior of resistive switching in epitaxial bismuth ferrite heterostructures0 aScaling behavior of resistive switching in epitaxial bismuth fer  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcJUL  a3962-39690 v243 a<p>Resistive switching (RS) of (001) epitaxial multiferroic BiFeO3/La0.67Sr0.33MnO3/SrTiO3 heterostructures is investigated for varying lengths scales in both the thickness and lateral directions. Macroscale current-voltage analyses in conjunction with local conduction atomic force microscopy (CAFM) reveal that whilst both the local and global resistive states are strongly driven by polarization direction, the type of conduction mechanism is different for each distinct thickness regime. Electrode-area dependent studies confirm the RS is dominated by an interface mechanism and not by filamentary formation. Furthermore, CAFM maps allow deconvolution of the roles played by domains and domain walls during the RS process. It is shown that the net polarization direction, and not domain walls, controls the conduction process. An interface mechanism based on barrier height and width alteration due to polarization reversal is proposed, and the role of electronic reconstruction at the interface is further investigated.</p>1 aRana, Abhimanyu1 aLu, Haidong1 aBogle, Kashinath, A.1 aZhang, Qi1 aVasudevan, Rama1 aThakare, Vishal1 aGruverman, Alexei1 aOgale, Satishchandra1 aValanoor, Nagarajan  uhttps://library.ncl.res.in/content/scaling-behavior-resistive-switching-epitaxial-bismuth-ferrite-heterostructures-0