02674nas a2200265   4500008004100000022001400041245011200055210006900167260007700236300001200313490000600325520169700331653002802028653001302056653002502069653001902094653002002113100003302133700002502166700001602191700001502207700002702222700003002249856012902279       2014                        eng d  a1867-388000aDisordered mesoporous TiO2-xNx+Nano-Au: an electronically integrated nanocomposite for solar H-2 generation0 aDisordered mesoporous TiO2xNxNanoAu an electronically integrated  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcFEB  a522-5300 v63 a<p>We report on H-2 generation by photocatalysis driven by simulated white light by electronically integrated Au nanoparticles with multifunctional, disordered mesoporous TiO2-xNx (Au-NT) nanocomposites. Solar H-2 generation (1.5 mmolh(-1)g(-1)) from aqueous methanol has been demonstrated with Au-NT nanocomposites. The water splitting activity of Au-NT is attributed to the 21.1 ps lifetime of charge carriers observed from fluorescence lifetime measurements, which indicates a high electron-injection efficiency from nano-Au to the conduction band of TiO2, and hence charge separation as well as utilization. This is directly supported by the observation of a high photoluminescence emission intensity with Au-NT that highlights the energy transfer from nano-Au to TiO2. The p-n heterojunction observed between the Au (001) and TiO2 (101) facets helps to-wards the higher charge separation and their utilization. A low mesochannel depth (&lt; 10 nm) associated with disordered mesoporous TiO2-xNx helps the charge carriers to move towards the surface for redox reactions and hence charge utilization. Visible-light absorption, as a result of the surface plasmon resonance of nano-Au, is observed in a broad range between 500 and 750 nm, which helps in harvesting visible-light photons. Finally, electronically integrated nano-Au with TiO2-xNx in Au-NT is evident from Raman and X-ray photoelectron spectroscopy measurements. All of these factors help to achieve a high rate of H-2 production. It is likely that a higher rate of H-2 production than that reported here is feasible by strategically locating Au clusters in porous TiO2 to generate hot spots through electronic integration.</p>10aheterogeneous catalysis10aHydrogen10amesoporous materials10aphotochemistry10awater splitting1 aSivaranjani, Kumarsrinivasan1 aRajaambal, Sivaraman1 aDas, Tanmay1 aRoy, Kanak1 aBhattacharyya, Somnath1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/disordered-mesoporous-tio2-xnxnano-au-electronically-integrated-nanocomposite-solar-h-2-002511nas a2200193   4500008004100000022001400041245010000055210006900155260011000224300001600334490000700350520170600357100002502063700001802088700002302106700002802129700003002157856013002187       2014                        eng d  a1463-907600aElectronic structure-sunlight driven water splitting activity correlation of (Zn1-yGay)(O1-zNz)0 aElectronic structuresunlight driven water splitting activity cor  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcSEP  a23654-236620 v163 a<p>(Zn1-yGay)(O1-zNz) (y &lt;= 0.10; z &lt;= 0.15) solid solutions have been investigated for their electronic structure and visible light photocatalytic activity, and a correlation was found between them. (Zn1-yGay)(O1-zNz) with ZnO as the major component have been synthesized by a solution combustion method in 10 minutes using simple raw materials. The local structures of Zn K edge and Ga K edge, and changes in the chemical environment with the incorporation of Ga and N in ZnO were determined by EXAFS study. EXAFS and XRD results suggested the dissolution of GaN in the ZnO lattice. The homogeneity of the solid solution was demonstrated from HRTEM studies. Photoluminescence studies revealed the creation of a new band at the top of the ZnO valence band (VB), and thus the broadening of the VB of (Zn1-yGay)(O1-zNz) or a decrease in the band gap was attributed to the origin of visible light absorption. UV-Vis spectral studies showed light absorption up to 550 nm, which directly supports the VB broadening. Predominant oxygen vacancies and high photocorrosion observed for ZnO were fully suppressed for (Zn1-yGay)(O1-zNz) , indicating the minimization of defects, and thus more sustainability under irradiation conditions. The bare solid solution exhibited reasonable and promising activity for solar hydrogen evolution and photoelectrochemical current generation at 0 V. The present work explained factors such as the preparation method, single phase structure with the stabilization of integral parts, homogeneity in the structure, compensation of oxygen vacancies, and suppression of the density of recombination centres that play a pivotal role in realizing solar energy harvesting.</p>1 aRajaambal, Sivaraman1 aYadav, A., K.1 aJha, Shambhu, Nath1 aBhattacharyya, Dibyendu1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/electronic-structure-sunlight-driven-water-splitting-activity-correlation-zn1-ygayo1-znz-002000nas a2200169   4500008004100000022001400041245013100055210006900186260011000255300001600365490000700381520124000388100002501628700001701653700003001670856013001700       2014                        eng d  a1477-922600aIn1-XGaXN@ZnO: a rationally designed and quantum dot integrated material for water splitting and solar harvesting applications0 aIn1XGaXNZnO a rationally designed and quantum dot integrated mat  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcSEP  a12546-125540 v433 a<p>The highly desirable combination of the visible light absorption properties of In1-xGaxN Quantum dots (QD) along with the multifunctionality of ZnO into a single integrated material was prepared for solar harvesting. This is the first report on InGaN QD integrated with ZnO (InGaN@ZnO), synthesized by a highly reproducible, simple combustion method in 15 min. Structural, microstructural and electronic integration of the nitride and oxide components of InGaN@ZnO was demonstrated by appropriate characterization methods. Self-assembly of InGaN QD is induced in growing nascent zinc oxo nanoclusters taking advantage of the common wurtzite structure and nitrogen incorporation at the expense of oxygen vacancies. Direct integration brings about a single phase structure exhibiting extensive visible tight absorption and high photostability. InGaN@ZnO suggests synergistic operation of tight harvesting and charge conducting components for solar H-2 generation without using any co-catalyst or sacrificial agent, and a promising photocurrent generation at 0 V under visible light illumination. The present study suggests a direct integration of QD with the host matrix and is a potential method to realize the advantages of QDs.</p>1 aRajaambal, Sivaraman1 aMapa, Maitri1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/in1-xgaxnzno-rationally-designed-and-quantum-dot-integrated-material-water-splitting-and-002506nas a2200253   4500008004100000022001400041245006900055210006800124260010200192300001000294490000800304520163300312653001301945653001701958653001901975653001601994653001802010653001802028653002002046100002502066700003302091700003002124856009802154       2015                        eng d  a0974-362600aRecent developments in solar H-2 generation from water splitting0 aRecent developments in solar H2 generation from water splitting  aC V RAMAN AVENUE, SADASHIVANAGAR, P B \#8005, BANGALORE 560 080, INDIAbINDIAN ACAD SCIENCEScJAN  a33-470 v1273 a<p>Hydrogen production from water and sunlight through photocatalysis could become one of the channels, in the not-so-distant future, to meet a part of ever growing energy demands. However, accomplishing solar water splitting through semiconductor particulate photocatalysis seems to be the `Holy Grail' problem of science. In the present mini-review, some of the critical strategies of semiconductor photocatalysis are focused with the aim of enumerating underlying critical factors such as visible light harvesting, charge carrier separation, conduction and their utilization that determine the quantum efficiency. We attempted to bring out the essential requirements expected in a material for facile water splitting by explaining important and new designs contributed in the last decade. The newly emerged designs in semiconductor architecture employing nanoscience towards meeting the critical factors of facile photocatalysis are elucidated. The importance of band gap engineering is emphasized to utilize potential wide band gap semiconductors. Assistance of metal nanostructures and quantum dots to semiconductors attains vital importance as they are exuberant visible light harvesters and charge carrier amplifiers. Benevolent use of quantum dots in solar water splitting and photoelectrochemical water splitting provides scope to revolutionize the quantum efficiency by its multiple exciton generation features. A list of drawbacks and issues that hamper the much needed breakthrough in photocatalysis of water splitting is provided to invite attention to address them and move towards sustainable water splitting.</p>10aHydrogen10ananomaterial10aPhotocatalysis10aquantum dot10aSemiconductor10avisible light10awater splitting1 aRajaambal, Sivaraman1 aSivaranjani, Kumarsrinivasan1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/recent-developments-solar-h-2-generation-water-splitting-0