01682nas a2200277   4500008004100000022001400041245004800055210004800103260006900151300001400220490000800234520082400242653001901066653002001085653003301105653001401138100002201152700002401174700002301198700002301221700001901244700002001263700002001283700002101303856008001324       2006                        eng d  a0040-609000aField emission from oriented tin oxide rods0 aField emission from oriented tin oxide rods  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcDEC  a1450-14540 v5153 a<p>Tin oxide (SnO2) films were grown on silicon substrates by a wet chemical route. It was found from scanning electron microscopy investigations that oriented SnO2 rods normal to the substrates were obtained. Field emission studies were carried out in diode configuration in an all metal ultra high vacuum chamber at a base pressure similar to 1.33 x 10(-8) mbar. The `onset' field required to draw 0.1 mu A/cm(2) current density from the emitter cathode was found to be similar to 3.4 V/mu m for SnO2 rods. The field emission current and applied field follows the Folwer-Nordheim relationship in low field regime. The observed results indicate that the field emission characteristics of chemically grown SnO2 structures are comparable to the vapor grown nanostructures. (c) 2006 Elsevier B.V. All rights reserved.</p>10afield emission10amicrostructures10ascanning electron microscopy10atin oxide1 aDeshpande, A., C.1 aKoinkar, Pankaj, M.1 aAshtaputre, S., S.1 aMore, Mahendra, A.1 aGosavi, S., W.1 aGodbole, P., D.1 aJoag, Dilip, S.1 aKulkarni, S., K.  uhttps://library.ncl.res.in/content/field-emission-oriented-tin-oxide-rods-001479nas a2200217   4500008004100000022001400041245008500055210006900140260008000209300001400289490000700303520067000310100002500980700002401005700002101029700002201050700002301072700002001095700003001115856011601145       2006                        eng d  a0957-448400aField emission studies of novel ZnO nanostructures in high and low field regions0 aField emission studies of novel ZnO nanostructures in high and l  aDIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcJUN  a2730-27350 v173 a<p>A study of the field emission characteristics of novel structures of ZnO, namely marigolds, multipods and microbelts, has been carried out in both the close proximity configuration and the conventional field emission microscope. The use of a conventional field emission microscope overcomes the drawback of arc formation at high field values. The nonlinearity in the Fowler - Nordheim ( F - N) plot, a characteristic feature of semiconductors has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability exhibited by these structures is also promising for future device applications.</p>1 aRamgir, Niranjan, S.1 aLate, Dattatray, J.1 aBhise, Ashok, B.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/field-emission-studies-novel-zno-nanostructures-high-and-low-field-regions-001822nas a2200217   4500008004100000022001400041245010200055210006900157260007100226300001600297490000800313520099800321100002501319700002401344700002101368700002301389700002201412700002001434700002201454856012801476       2006                        eng d  a1520-610600aZnO multipods, submicron wires, and spherical structures and their unique field emission behavior0 aZnO multipods submicron wires and spherical structures and their  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcSEP  a18236-182420 v1103 a<p>A simple method of vapor deposition for the shape selective synthesis of ZnO structures, namely, multipods, submicron wires, and spheres, has been successfully demonstrated. A plausible growth mechanism based on the studies of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) is proposed. Our studies suggest that the growth of a multipod structure is governed by the screw dislocation propagation while the vapor-liquid-solid (VLS) mechanism is responsible for the formation of submicron wires and spheres. Moreover, the flow rate of the carrier gas plays a crucial role in governing the morphology. Further, these structures exhibit an enhanced field emission behavior. The nonlinearity in the Fowler-Nordheim (F-N) plot, a characteristic feature of electron emission from semiconductors, is explained by considering the contributions from both the conduction and the valence bands of ZnO.</p>1 aRamgir, Niranjan, S.1 aLate, Dattatray, J.1 aBhise, Ashok, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aVijayamohanan, K.  uhttps://library.ncl.res.in/content/zno-multipods-submicron-wires-and-spherical-structures-and-their-unique-field-emission-001371nas a2200205   4500008004100000022001400041245006700055210006700122260012500189300002300314490000700337520058300344100002600927700002300953700002000976700002500996700002201021700003001043856009201073       2007                        eng d  a0003-695100aEnergy analysis of field emitted electrons from a ZnO tetrapod0 aEnergy analysis of field emitted electrons from a ZnO tetrapod  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAPR  aArticle No. 1621020 v903 a<p>The experimental total energy distribution (TED) of the field emitted electrons from a single pod of a ZnO tetrapod has been obtained, exhibiting a two-peak feature. The energy difference between the two peaks in the TED is found to be nearly equal to the band gap of the bulk ZnO. The results show that field emitted electrons originate from both the conduction and valence bands. The peak position dependence on the applied voltage has also been observed. In the present case, the size of the ZnO tetrapod is not small enough to reflect the quantum confinement effects.</p>1 aAl-Tabbakh, Ahmed, A.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aRamgir, Niranjan, S.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/energy-analysis-field-emitted-electrons-zno-tetrapod01611nas a2200277   4500008004100000022001400041245005900055210005800114260007300172300001400245490000800259520071800267653002400985653001901009653002901028653000901057653000901066100002101075700002401096700002501120700002301145700002201168700003001190700002001220856009301240       2007                        eng d  a0169-433200aField emission investigations of RuO2-doped SnO2 wires0 aField emission investigations of RuO2doped SnO2 wires  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a9159-91630 v2533 a<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emission10afield enhancement factor10aRuO210aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigations-ruo2-doped-sno2-wires-001441nas a2200217   4500008004100000022001400041245006600055210006600121260012500187300001100312490000700323520062500330100002300955700002800978700002201006700003001028700002401058700002301082700002001105856009801125       2008                        eng d  a0003-695100aEnhanced field emission from hexagonal rhodium nanostructures0 aEnhanced field emission from hexagonal rhodium nanostructures  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUN  a2531060 v923 a<p>Shape selective synthesis of nanostructured Rh hexagons has been demonstrated with the help of a modified chemical vapor deposition using rhodium acetate. An ultralow threshold field of 0.72 V/mu m is observed to generate a field emission current density of 4 x 10(-3) mu A/cm(2). The high enhancement factor (9325) indicates that the origin of electron emission is from nanostructured features. The smaller size of emitting area, excellent current density, and stability over a period of more than 3 h are promising characteristics for the development of electron sources. (C) 2008 American Institute of Physics.</p>1 aSathe, Bhaskar, R.1 aKakade, Bhalchandra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/enhanced-field-emission-hexagonal-rhodium-nanostructures-001813nas a2200277   4500008004100000022001400041245007000055210006400125260006900189300001400258490000800272520089200280653002401172653001801196653002901214653002001243653001401263100002101277700002401298700002501322700002301347700002201370700003001392700002001422856009301442       2008                        eng d  a0040-609000aRuO(2) doped SnO(2) nanobipyramids on Si (100) as a field emitter0 aRuO2 doped SnO2 nanobipyramids on Si 100 as a field emitter  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUL  a6388-63910 v5163 a<p>Thin films of RuO(2): SnO(2) nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0. 1 gA/ cm 2 current density has been found to be 0.2 V/mu m. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of I tA is observed to be good. Our field emission results on RuO(2): SnO(2) nanobipyramids indicate that, RuO(2): SnO(2) nanobipyramids are a potential candidate for futuristic field emission based devices. (c) 2008 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emitter10afield enhancement factor10aruthenium oxide10atin oxide1 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/ruo2-doped-sno2-nanobipyramids-si-100-field-emitter-001786nas a2200289   4500008004100000022001400041245015900055210006900214260010600283300001200389490000700401520064700408653001501055653003001070653003901100653002101139653003401160100002501194700002101219700002001240700002301260700002601283700002001309700001901329700002201348856012601370       2008                        eng d  a0042-207X00aScanning tunneling microscopic and field emission microscopic studies of nanostructured molybdenum film synthesized by electron cyclotron resonance plasma0 aScanning tunneling microscopic and field emission microscopic st  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcSEP  a435-4430 v833 a<p>Cathodic sputtering is demonstrated to be effective in synthesizing thin films of molybdenum nanoparticles. An electron cyclotron resonance plasma reactor has been used as the source. The particle size distribution is found to be controllable by proper choice of the cathodic bias potential. Sizes ranging between 20 and 30 nm deposited at the optimum bias potential are found to exhibit a self assembled structure as observed by scanning tunneling microscopy. Field emission microscopic studies on these films supported on W have exhibited very stable emission current over a period of 3 h. (C) 2008 Elsevier Ltd. All rights reserved.</p>10aECR plasma10aField emission microscopy10aHollow cathode chemical sputtering10aMo nanoparticles10aScanning tunneling microscopy1 aPurohit, Vishwas, S.1 aBhise, Ashok, B.1 aDey, Shirshendu1 aMore, Mahendra, A.1 aDharmadhikari, C., V.1 aJoag, Dilip, S.1 aPasricha, Renu1 aBhoraskar, S., V.  uhttps://library.ncl.res.in/content/scanning-tunneling-microscopic-and-field-emission-microscopic-studies-nanostructured-001771nas a2200265   4500008004100000022001400041245006200055210006100117260007300178300001400251490000700265520091100272653002201183653001301205653001901218653000901237100002101246700002401267700002301291700002301314700002201337700003001359700002001389856009601409       2009                        eng d  a1293-255800aField emission investigation of single Fe-doped SnO2 wire0 aField emission investigation of single Fedoped SnO2 wire  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1114-11170 v113 a<p>Tin oxide submicronwires doped with Fe element were prepared by the thermal evaporation method. Morphological and structural characterizations revealed wires with sub micron size and crystalline in nature. The field electron emission from the single Fe:SnO2 wire was carried out in conventional field emission microscope. The Fowler-Nordheim plot obtained from I-V characteristics of the wire showed a linear behavior typical that of metal. The field enhancement factor estimated from the slope of the F-N plot is 7455 cm(-1), indicating that the field emission is from nanometric features of the emitter. A current density of 10 A/cm(2) has been obtained at an applied field of 4.845 x 10(3) V/mu m. The field emission current-time record at a current level of 1 mu A for more than 3 h duration is promising for various field emissions based applications. (C) 2009 Published by Elsevier Masson SAS.</p>10aCurrent stability10aFe doped10afield emission10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, Bhaskar, R.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigation-single-fe-doped-sno2-wire-002342nas a2200265   4500008004100000022001400041245006100055210006000116260009200176300001200268490000600280520146300286653001901749653002601768653001901794653000801813100002401821700002601845700002201871700002201893700002001915700002301935700002301958856009501981       2009                        eng d  a1662-525000aField emission properties of Al-doped ZnO nanostructures0 aField emission properties of Aldoped ZnO nanostructures  aLAUBISRUTISTR 24, STAFA-ZUERICH, CH-8712, SWITZERLANDbTRANS TECH PUBLICATIONS LTDcJAN  a231-2370 v53 a<p>Field emission from Al-doped ZnO nanostrcutures has been investigated in planar diode configuration under ultra high vacuum conditions. The Al-doped ZnO nanostructures were synthesized by co-precipitation method with varying aluminium concentrations. The as- synthesized product was characterized by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The threshold field required to draw a current density of similar to 1 mu A/cm(2) was observed to be similar to 2.0 V/mu m and similar to 2.3 V/mu m for Al-doped ZnO nanostructures synthesized with aluminium concentrations of 1% and 3%, respectively. The Fowler- Nordheim (F-N) plots for both the specimens exhibit non-linear behaviour, which is observed to be specimen dependent. The nonlinearity observed in the F-N plots has been interpreted on the basis of the theory of electron emission from semiconductor emitters. The field enhancement factors, estimated from the slope of the F-N plots, are found to be similar to 9.3 x 10(3) and 3.9 x 10(3) for 1% and 3% Al-doped ZnO emitters, respectively. The high values of the field enhancement factor Suggest that the emission is from the nanostructures. The emission current stability measured at the preset value of similar to 2 mu A over a period of more than three hours is found to be fairly stable. The results indicate use of Al-doped ZnO nanostructures as promising emitters for field emission based devices.</p>10afield emission10aFowler-Nordheim plots10aNanostructures10aZnO1 aNavale, Shalaka, C.1 aSheini, Farid, Jamali1 aPatil, Sandip, S.1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aGosavi, Suresh, W.  uhttps://library.ncl.res.in/content/field-emission-properties-al-doped-zno-nanostructures-001795nas a2200265   4500008004100000022001400041245011000055210006900165260006900234300001400303490000800317520082400325653001401149653002201163653001401185653002201199653003301221653003701254653001501291100002601306700002201332700002001354700002301374856013201397       2009                        eng d  a0040-609000aInfluence of process variables on growth of ZnO nanowires by cathodic electrodeposition on zinc substrate0 aInfluence of process variables on growth of ZnO nanowires by cat  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcOCT  a6605-66110 v5173 a<p>Influence of the deposition duration and electrolyte concentration on the structural and morphological features of the ZnO thin films, grown by cathodic electrodeposition on zinc substrate followed by annealing in air at 400 degrees C, have been investigated. The surface morphology of the as-synthesized films shows two distinct features, presence of `2-dimensional nanosheets' on the area near the electrolyte-air interface and `granular' nanostructures, below the interface region. However, upon annealing, the formation of ZnO nanowires, possessing length of several microns and diameter less than 20 nm, on the entire substrate is observed. The X-ray and selected area electron diffraction patterns clearly confirm the polycrystalline nature of the ZnO nanowires. (C) 2009 Elsevier B.V. All rights reserved.</p>10aAnnealing10aElectrodeposition10aNanowires10aphotoluminescence10ascanning electron microscopy10atransmission electron microscopy10aZinc oxide1 aSheini, Farid, Jamali1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/influence-process-variables-growth-zno-nanowires-cathodic-electrodeposition-zinc-substrate-001688nas a2200289   4500008004100000022001400041245008700055210006900142260009200211300001800303490000600321520071700327653001801044653001101062653001101073653001901084653001401103653000901117100002101126700002401147700001401171700002301185700002201208700003001230700002001260856011801280       2010                        eng d  a1745-808000aFabrication of In-doped SnO2 nanowire arrays and its field emission investigations0 aFabrication of Indoped SnO2 nanowire arrays and its field emissi  a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcDEC  aPII 9312836630 v53 a<p>The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mu A/cm2 is drawn from the emitter at an applied field of 4 V/mu m. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mu A is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.</p>10acold cathodes10adevice10aDoping10afield emission10aNanowires10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/fabrication-doped-sno2-nanowire-arrays-and-its-field-emission-investigations-001602nas a2200253   4500008004100000022001400041245010500055210006900160260007100229300001400300490000600314520069700320653001901017653002501036653001901061653001701080653000801097100002601105700002301131700002001154700002201174700003001196856012201226       2010                        eng d  a1936-085100aFowler-nordheim plot behavior and mechanism of field electron emission from ZnO tetrapod structures	0 aFowlernordheim plot behavior and mechanism of field electron emi  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcOCT  a5585-55900 v43 a<p>Field emission measurements of current-voltage characteristics are reported for tetrapod structures of ZnO. The nonlinear Fowler-Nordheim (FN) plot is analyzed according to a model of calculation based on saturation of conduction band current and predominance of valence band current at high-field values. The simulated FN plot exhibits similar features to those observed experimentally. The model of calculation suggests that the slope variation of the FN plot, in the high-field and low-field regions, does not depend on the magnitude of saturation. Instead, it is a characteristic of the energy band structure and voltage-to-barrier-field conversion factor of the emitting material.</p>10afield emission10aFowler-Nordheim plot10aNanostructures10anonlinearity10aZnO1 aAl-Tabbakh, Ahmed, A.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/fowler-nordheim-plot-behavior-and-mechanism-field-electron-emission-zno-tetrapod-001822nas a2200265   4500008004100000022001400041245010300055210006900158260012500227300001100352490000700363520081100370653002101181653002001202653001901222653001501241100002801256700003001284700002401314700002501338700002201363700002301385700002001408856012801428       2010                        eng d  a0003-695100aHigh current density, low threshold field emission from functionalized carbon nanotube bucky paper0 aHigh current density low threshold field emission from functiona  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAUG  a0731020 v973 a<p>Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of ``as-grown'' sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler-Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm(2) and 8.5 mA/cm(2) for ``as-grown'' and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479049]</p>10aCarbon nanotubes10acurrent density10afield emission10afullerenes1 aKakade, Bhalchandra, A.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aChavan, Padmakar, G.1 aSheini, Farid, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/high-current-density-low-threshold-field-emission-functionalized-carbon-nanotube-bucky-002208nas a2200205   4500008004100000022001400041245011100055210006900166260007100235300001400306490000800320520141000328100002601738700002301764700002401787700001801811700002901829700002001858856012401878       2010                        eng d  a1932-744700aObservation of photoconductivity in Sn-doped ZnO nanowires and their photoenhanced field emission behavior0 aObservation of photoconductivity in Sndoped ZnO nanowires and th  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcMAR  a3843-38490 v1143 a<p>Sn-doped ZnO nanowire films have been Successfully synthesized by electrodeposition oil zinc foil followed by annealing in air at 400 degrees C for 4 h. The XRD patterns of the annealed specimens exhibit I set of well-defined diffraction peaks indexed to the wurtzite phase of ZnO. The Surface morphology of the as-synthesized films showed a network of densely packed flakes/sheets oil the Substrate. However, upon annealing, the formation of ZnO nanowires, processing length in the range of several micrometers and diameter less than 150 nm, oil the entire substrate is observed. The relative atomic percentage of Sri, estimated from the energy dispersive spectra, was found to be 0.5 and 2.0 in the ZnO films deposited for 10 and 40 min durations, respectively. Front the field emission studies, the Values of the turn-on field and threshold field, required to draw emission Current density of 10 and 100 mu A/cm(2), are observed to be 0.68 and 1.1 V/mu m for 0.5% Sn-doped ZnO and 1.72 and 2.25 V/mu m for 2.0% Sn-doped ZnO, respectively. The field emission Current stability investigated for a duration Of h at the preset value of 100 mu A is found to be excellent. A prominent photoenhancement in the field emission Current upon visible light illumination of the Sn-doped ZnO nanowires films has been observed. This enhancement has been attributed to the photoconductivity of the Sn-doped ZnO.</p>1 aSheini, Farid, Jamali1 aMore, Mahendra, A.1 aJadkar, Sandesh, R.1 aPatil, K., R.1 aPillai, Vijaymohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/observation-photoconductivity-sn-doped-zno-nanowires-and-their-photoenhanced-field-001879nas a2200253   4500008004100000022001400041245010200055210006900157260007300226300001400299490000800313520098400321653001601305653001901321653001801340653001401358100002101372700002401393700002101417700001901438700002001457700002201477856012601499       2011                        eng d  a0169-433200aField emission studies of silver nanoparticles synthesized by electron cyclotron resonance plasma0 aField emission studies of silver nanoparticles synthesized by el  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a7184-71890 v2573 a<p>Field emission has been studied for silver nanoparticles (25-200 nm), deposited within a cylindrical silver target in an electron cyclotron resonance (ECR) plasma. Particle size distribution was controlled by optimum biasing voltages between the chamber and the target. Presence of non-oxidized silver was confirmed from the X-Ray diffraction analysis; however, thin protective layer of oxide was identified from the selective area electron diffraction pattern obtained with transmission electron microscopy. The silver nanoparticles were seen to exhibit hilly pointed like structures when viewed under the atomic force microscopy (AFM). The emissive properties of these particles were investigated by field emission microscopy. It is found that this technique of deposition is ideal for formation of nanoparticles films on different substrate geometries with size controllability as well as its application to emission devices. (C) 2011 Elsevier B.V. All rights reserved.</p>10aCold plasma10afield emission10aNanoparticles10athin film1 aPurohit, Vishwas1 aMazumder, Baishakhi1 aBhise, Ashok, B.1 aPoddar, Pankaj1 aJoag, Dilip, S.1 aBhoraskar, S., V.  uhttps://library.ncl.res.in/content/field-emission-studies-silver-nanoparticles-synthesized-electron-cyclotron-resonance-002295nas a2200253   4500008004100000022001400041245017400055210006900229260007300298300001400371490000800385520135300393653001701746653001101763653001101774653001901785653001501804653000801819100002501827700001801852700002001870700002301890856012801913       2011                        eng d  a0169-433200aSynthesis of Cu-ZnO and C-ZnO nanoneedle arrays on zinc foil by low temperature oxidation route: effect of buffer layers on growth, optical and field emission properties0 aSynthesis of CuZnO and CZnO nanoneedle arrays on zinc foil by lo  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcAUG  a8366-83720 v2573 a<p>Different densities of ZnO nanoneedle films have been prepared by pre-coated zinc foils with thin layer of copper and carbon followed by thermal oxidation at 400 degrees C in air. The X-ray diffraction patterns show well defined peaks, which could be indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscope images clearly reveal formation of ZnO needles on the entire substrate surface. The X-ray photoelectron spectroscopy studies indicate that Cu and C ions are incorporated into the ZnO lattice. Photoluminescence studies evaluate different emission bands originated from different defect mechanism. From the field emission studies, the threshold field, required to draw emission current density of similar to 100 mu A/cm(2), is observed to be 2.25 V/mu m and 1.57 V/mu m for annealed zinc foil pre-coated with copper and carbon, respectively. The annealed film with copper layer exhibits good emission current stability at the pre-set value of similar to 100 mu A over a duration of 4 h. The results show that buffer layer is an important factor to control the growth rate, resulting in different density of ZnO needles, which leads to field emission properties. This method may have potential in fabrication of electron sources for high current density applications. (C) 2011 Elsevier B. V. All rights reserved.</p>10aBuffer layer10aCarbon10aCopper10afield emission10aNanoneedle10aZnO1 aJamali-Sheini, Farid1 aPatil, K., R.1 aJoag, Dilip, S.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/synthesis-cu-zno-and-c-zno-nanoneedle-arrays-zinc-foil-low-temperature-oxidation-route-001945nas a2200193   4500008004100000022001400041245011500055210006900170260011000239300001400349490000600363520114000369100002501509700002401534700002201558700002301580700002001603856012801623       2011                        eng d  a2040-336400aSynthesis of single crystalline CdS nanocombs and their application in photo-sensitive field emission switches0 aSynthesis of single crystalline CdS nanocombs and their applicat  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJAN  a1078-10830 v33 a<p>Single crystalline CdS nanocombs were synthesized by a thermal evaporation route. The photo-sensitive field emission current shows a reproducible switching behavior, with a rise in current level of nearly five times the initial preset value of similar to 1 mu A. An ultra low turn-on field, required to draw an emission current density of similar to 0.1 mu A cm(-2) (100 nA), is found to be similar to 0.26 V mu m(-1) (260 V), which is much lower than the reported values for various other CdS nanostructures. Upon illumination with visible light the CdS nanocombs act as a photo field emission switch. At an applied field of similar to 0.65 V mu m(-1) the current densities are observed to be similar to 14.6 mu A cm(-2) and similar to 26.9 mu A cm(-2), without and with light illumination, respectively. The average emission current is seen to be stable over the duration of measurement for two preset values. The high sensitivity and fast response in the visible range indicates that the CdS nanocombs can be used as a photo-sensitive field emitting switch in device applications, and also in pulsed electron beam technology.</p>1 aChavan, Padmakar, G.1 aBadadhe, Satish, S.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/synthesis-single-crystalline-cds-nanocombs-and-their-application-photo-sensitive-field-001456nas a2200217   4500008004100000245006000041210005900101260000800160300001400168490000600182520078800188100002300976700002400999700002201023700001801045700001601063700002001079700002301099700002401122856009201146       2013                        eng d00aEnhanced field-emission behavior of layered MoS2 sheets0 aEnhanced fieldemission behavior of layered MoS2 sheets  cAUG  a2730-27340 v93 aField emission studies are reported for the first time on layered MoS2 sheets at the base pressure of approximate to 1 x 10(-8) mbar. The turn-on field required to draw a field emission current density of 10 A/cm(2) is found to be 3.5 V/m for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (approximate to 1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.1 aKashid, Ranjit, V.1 aLate, Dattatray, J.1 aChou, Stanley, S.1 aHuang, Yi-Kai1 aDe, Mrinmoy1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aDravid, Vinayak, P.  uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mos2-sheets01820nas a2200241   4500008004100000022001400041245007300055210006900128260009000197300000900287490000600296520096100302100002601263700002601289700002301315700002001338700002301358700002201381700002301403700002101426700002401447856010701471       2013                        eng d  a2045-232200aSuperior field emission properties of layered WS2-RGO nanocomposites0 aSuperior field emission properties of layered WS2RGO nanocomposi  aMACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLANDbNATURE PUBLISHING GROUPcNOV  a32820 v33 a<p>We report here the field emission studies of a layered WS2-RGO composite at the base pressure of similar to 1 x 10(-8) mbar. The turn on field required to draw a field emission current density of 1 mu A/cm(2) is found to be 3.5, 2.3 and 2 V/mu m for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of similar to 800 mu A/cm(2) is drawn at an applied field of 4.1 V/mu m from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.</p>1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/superior-field-emission-properties-layered-ws2-rgo-nanocomposites-002031nas a2200241   4500008004100000022001400041245007600055210006900131260010600200300001000306490000800316520116100324653002201485653001901507653001401526100002501540700002301565700002401588700002201612700002301634700002001657856011201677       2014                        eng d  a0042-207X00aCdS nanowires: ultra-long growth and enhanced field emission properties0 aCdS nanowires ultralong growth and enhanced field emission prope  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcMAR  a38-450 v1013 a<p>Here, we report the synthesis of ultra-long CdS nanowires with aspect ratio similar to 8 x 10(4) by simple route of thermal evaporation technique. A change in the vertical arrangement of quartz boats leads in to the synthesis of ultra-long CdS nanovvires via high degree of condensation. This technique is seen to be cost effective and easy. The growth of the nanowires is found to be increased very rapidly from few micrometers to few millimeters. The possible reason for the growth of the ultra-long CdS nanowires is discussed in detail. The turn-on field defined for the current density of similar to 0.1 mu A/cm(2) has been found to be similar to 1.4, 1.45, 1 and 0.17 V/mu m for specimen A, B, C and D (specimens A-D, synthesized by variation in synthesis parameters) respectively. The turn-on field of the specimen D (similar to 0.17 V/mu m) is found to be quite superior than the value reported for other CdS nanoforms which is very remarkable. Simple way of bulk fabrication leads to the low turn-on value which indicates a possible use of the present emitter in the micro/nanoelectronics devices. (C) 2013 Elsevier Ltd. All rights reserved.</p>10aCurrent stability10afield emission10asynthesis1 aChavan, Padmakar, G.1 aKashid, Ranjit, V.1 aBadhade, Satish, S.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/cds-nanowires-ultra-long-growth-and-enhanced-field-emission-properties-002123nas a2200241   4500008004100000022001400041245008600055210006900141260012500210300001100335490000800346520120400354100002601558700002601584700002301610700002001633700002301653700002201676700002301698700002101721700002401742856011501766       2014                        eng d  a0003-695100aEnhanced field emission properties of doped graphene nanosheets with layered SnS20 aEnhanced field emission properties of doped graphene nanosheets   aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUL  a0431090 v1053 a<p>We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 mu A/cm(2) is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/mu m) compared to pristine SnS2 (4.8 V/mu m) nanosheets. The field enhancement factor beta (similar to 3200 for the SnS2 and similar to 3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowering of the work function of SnS2 when supported by graphene, which is in response to p-type doping of graphene. (C) 2014 AIP Publishing LLC.</p>1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/enhanced-field-emission-properties-doped-graphene-nanosheets-layered-sns2-001785nas a2200301   4500008004100000022001400041245006700055210006600122260007700188300001400265520077300279653003601052653001901088653002201107653001901129653001101148653001301159100002601172700002301198700002301221700002001244700002301264700002701287700002301314700002101337700002401358856010101382       2014                        eng d  a1434-194800aMetallic few-layer flowerlike VS2 nanosheets as field emitters0 aMetallic fewlayer flowerlike VS2 nanosheets as field emitters  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcNOV  a5331-53363 a<p>We report first-principles DFT calculations of the single-layer VS2 work function, the experimental synthesis of flower-like few-layer-thick VS2 nanosheets by a simple one-step hydrothermal method, and the investigation of their field emission properties. The turn-on field required to draw emission current densities of 1 and 10 mu A/cm(2) were 4 and 5.01 V/mu m, respectively. The observed turn-on field values are attributed to the high field enhancement factor (ca. 2500), which is due to presence of sharp protrusions in the VS2 nanosheets. Furthermore, the field-emission current stability of the VS2 emitter shows stable behavior over a period of 12 h. Further, DFT calculations show that the work function (f) of the single-layer VS2 emitter is 6.01 eV.</p>10aDensity functional calculations10afield emission10aLayered compounds10aNanostructures10aSulfur10aVanadium1 aRout, Chandra, Sekhar1 aKhare, Ruchita, T.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aLanzillo, Nicholas, A.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/metallic-few-layer-flowerlike-vs2-nanosheets-field-emitters-001719nas a2200301   4500008004100000020002200041022001400063245006700077210006600144260019300210520062500403653002201028653001901050653001401069653001901083100002501102700002301127700002001150700002401170700002201194700001601216700001701232700001701249700001801266700001701284700001501301856010101316       2014                        eng d  a978-1-4799-5306-6  a2164-237000aPhoto-enhanced field emission studies of tapered CdS nanobelts0 aPhotoenhanced field emission studies of tapered CdS nanobelts  a345 E 47th St, New York, NY 10017 USAbPaul Scherrer Inst; EMPA, Mat Sci & Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices SoccJUL3 a<p>Field emission and photo-enhanced field emission characteristics of single crystalline tapered CdS nanobelts have been investigated. The turn-on field for the emission current density of similar to 0.1 mu A/cm(2) is found to be similar to 2.1 V/mu m, which is much lower than reported values for various CdS nanostructures. The photo-enhanced field emission current shows a reproducible photo-switching behavior with rise in current level nearly four times that of its initial preset value (similar to 1 mu A) which is found to be very remarkable. Possible mechanism of photo-enhanced field emission is discussed.</p>10aCurrent stability10afield emission10aNanobelts10aPhotoswitching1 aChavan, Padmakar, G.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aBadadhe, Satish, S.1 aMulla, Imtiaz, S.1 aTsujino, S.1 aGobrecht, J.1 aParaliev, M.1 aBraun, H., H.1 aGroening, O.1 aFeurer, T.  uhttps://library.ncl.res.in/content/photo-enhanced-field-emission-studies-tapered-cds-nanobelts-002794nas a2200265   4500008004100000020002200041245011500063210006900178260019300247520172400440653001902164653002102183653001902204100002602223700002002249700002702269700002402296700001502320700001602335700001602351700001402367700001602381700001402397856011702411       2014                        eng d  a978-1-4799-5306-600aPhotosensitive field emission study of SnS2 nanosheets (27th International Vacuum Nanoelectronics Conference )0 aPhotosensitive field emission study of SnS2 nanosheets 27th Inte  a345 E 47TH ST, NEW YORK, NY 10017 USAbPaul Scherrer Inst; EMPA, Mat Sci & Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices SoccJUL3 a<p>SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to Field Emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solution are used. The FE study is carried out in all metal Ultra High Vacuum (UHV) chamber in planar diode configuration at a base pressure of similar to 10(-8) torr. A maximum current density of 110 mu A/cm(2) was attainable. The turn on field required to draw a current density of 1 mu A/cm(2) is found to be 2.6 V/mu m. A separate study was carried out to investigate the photosensitivity of the emitter by illuminating the specimen under visible light. In dark, the FN plot is non-linear, indicative of semiconductor nature of the emitter. However, on illumination, the FN plot is observed to be linear. This remarkable change can be explained by the photoconductivity imparted on illumination. The field at the tip is high in presence of light, than in dark, due to enhanced conductivity. It is also observed that on switching ON the light, the FE current increases almost instantaneously. Repetitive switching is observed at a fixed applied voltage, generating current pulses. The visible light soaking of the sample is carried out by illuminating the lamp for more than 100 minutes, where the current seems to saturate. On switching off the lamp the emission current decayed almost to its initial value exponentially. The photosensitivity has been studied for different wavelengths in the visible spectra. The maximum photosensitive field emission is observed for green filter. With this photoresponse, it is envisaged that SnS2 nanosheets are a potential candidate for optoelectronic applications of field emitters.</p>
10afield emission10aphotosensitivity10aPhotoswitching1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aRout, Chandra, Shekhar1 aLate, Dattatray, J.1 aTsujino, S1 aGobrecht, J1 aParaliev, M1 aBraun, HH1 aGroening, O1 aFeurer, T  uhttps://library.ncl.res.in/content/photosensitive-field-emission-study-sns2-nanosheets-27th-international-vacuum01872nas a2200181   4500008004100000022001400041245005900055210005900114260009900173300002700272490000700299520119400306100002601500700002001526700002701546700002401573856009301597       2015                        eng d  a1071-102300aPhotosensitive field emission study of SnS2 nanosheets0 aPhotosensitive field emission study of SnS2 nanosheets  aSTE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USAbA V S AMER INST PHYSICScMAY  aArticle Number: 03C1060 v333 a<p>SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to field emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solutions are used. The FE study is carried out in a planar diode configuration at a base pressure of similar to 10(-8) mbar. The emission photosensitivity is also investigated by illuminating the specimen with a visible light source. In dark, the turn on field, the electric field required to obtain a current density of 1 mu A/cm(2), is found to be 5.9 V/mu m. Upon illumination, the emitter with visible light, it is found to reduce to 5.0 V/mu m. A significant change in the nature of the Fowler-Nordheim plot with light illumination is also observed and has been explained on the basis of photoconductivity. Repetitive switching ON and OFF the light source, at a fixed applied voltage, is found to generate current pulses. The photosensitivity is also studied with various color filters. With the photoswitching and the enhanced field emission properties, it is envisaged that SnS(2)NSs possess a potential for optoelectronic applications of field emitters. (C) 2014 American Vacuum Society.</p>1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aRout, Chandra, Shekhar1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/photosensitive-field-emission-study-sns2-nanosheets-201025nas a2200169   4500008004100000020002200041245005600063210005500119260009200174520040100266653001800667100001400685700002000699700002200719700002400741856009000765       2016                        eng d  a978-1-5090-2419-300aSingle SnO2 Nanowire: field emission investigations0 aSingle SnO2 Nanowire field emission investigations  a345 E 47th St, New York, NY 10017 USAbIEEE, 345 E 47th St, New York, NY 10017 USAcJUL3 a<p>The present work deals with the field emission study on multiple SnO2 nanowires synthesized by simple thermal evaporation method. For the realistic analysis of the Fowler Nordheim plot of the semiconducting SnO2, field emission behavior of a single nanowire is studied. A relevant model explaining the field emission mechanism from the single SnO2 nanowire is also proposed by the authors.</p>10aSnO2 nanowire1 aJoshi, D.1 aJoag, Dilip, S.1 aMulla, Imtiaz, S.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/single-sno2-nanowire-field-emission-investigations01240nas a2200169   4500008004100000245006500041210006400106260000800170300002700178490000700205520067100212100002600883700002000909700002400929700002200953856009500975       2017                        eng d00aNonlinear Fowler-Nordheim behavior of a single SnO2 nanowire0 aNonlinear FowlerNordheim behavior of a single SnO2 nanowire  cMAR  aArticle Number: 02C1050 v353 aThe present work deals with the field emission study on multiple SnO2 nanowires synthesized by a simple thermal evaporation method. The randomly oriented multiple nanowires grown by the vapor-liquid-solid mechanism exhibit low turn on field (0.8V/mu m defined for the current density of 1 mu A/cm(2)) and linear Fowler-Nordheim nature (FN). However, for the understanding of the nature of the FN plot, field emission behavior of a single SnO2 nanowire is investigated. The FN plot is observed to be nonlinear in nature. A simple model explaining the field emission mechanism from the semiconducting single SnO2 nanowire is proposed. (C) 2017 American Vacuum Society.1 aJoshi, Padmashree, D.1 aJoag, Dilip, S.1 aLate, Dattatray, J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/nonlinear-fowler-nordheim-behavior-single-sno2-nanowire02179nas a2200193   4500008004100000245011300041210006900154260000800223300001400231490000700245520148200252100002401734700002101758700002301779700001601802700002001818700002201838856012501860       2018                        eng d00aElectrochemically synthesized faceted CuInTe2 nanorods as an electron source for field emission applications0 aElectrochemically synthesized faceted CuInTe2 nanorods as an ele  cAPR  a5284-52940 v423 aHerein, CuInTe2 (CIT) thin films with faceted nanorod-like morphology have been synthesized on a flexible molybdenum foil using a water-based low-cost electrodeposition technique. The co-deposition potential for CIT was optimized using cyclic voltammetry with respect to that of the Ag/AgCl reference electrode, and films were deposited from -0.6 V to -0.9 V at the working temperature of 75 degrees C. The as-prepared CIT films exhibited an amorphous nature, whereas the RTP-annealed films exhibited a highly crystalline chalcopyrite nature as a function of the growth potential. A red shift was observed in the Raman spectra of the as-deposited films that shifted towards the original position upon annealing. The Cu/In ratio obtained by the EDS analysis was found to decrease systematically upon increasing the growth potential. X-ray photoelectron spectroscopy (XPS) studies revealed the presence of Cu+, Cu2+ satellites, In3+, Te2-, and Te4+ states of Cu, In, and Te. The field emission study showed a maximum current density of 1.74 mA cm(-2), which was attainable at an applied electric field of 1.5 V mu m(-1). The turn-on field was found to be 0.92 V mu m(-1), comparable to that of the carbon nanofibres. The emitter exhibited stable electron emission over a period of 3 hours. The faceted CIT nanorods with columnar growth are a potential candidate for application as an electron source, and herein, the field emission of CIT nanorods is reported for the first time.1 aLakhe, Manorama, G.1 aJoshi, Padmshree1 aChoudhary, Ram, J.1 aGanesan, V.1 aJoag, Dilip, S.1 aChaure, Nandu, B.  uhttps://library.ncl.res.in/content/electrochemically-synthesized-faceted-cuinte2-nanorods-electron-source-field-emission