01479nas a2200217   4500008004100000022001400041245008500055210006900140260008000209300001400289490000700303520067000310100002500980700002401005700002101029700002201050700002301072700002001095700003001115856011601145       2006                        eng d  a0957-448400aField emission studies of novel ZnO nanostructures in high and low field regions0 aField emission studies of novel ZnO nanostructures in high and l  aDIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcJUN  a2730-27350 v173 a<p>A study of the field emission characteristics of novel structures of ZnO, namely marigolds, multipods and microbelts, has been carried out in both the close proximity configuration and the conventional field emission microscope. The use of a conventional field emission microscope overcomes the drawback of arc formation at high field values. The nonlinearity in the Fowler - Nordheim ( F - N) plot, a characteristic feature of semiconductors has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability exhibited by these structures is also promising for future device applications.</p>1 aRamgir, Niranjan, S.1 aLate, Dattatray, J.1 aBhise, Ashok, B.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/field-emission-studies-novel-zno-nanostructures-high-and-low-field-regions-001822nas a2200217   4500008004100000022001400041245010200055210006900157260007100226300001600297490000800313520099800321100002501319700002401344700002101368700002301389700002201412700002001434700002201454856012801476       2006                        eng d  a1520-610600aZnO multipods, submicron wires, and spherical structures and their unique field emission behavior0 aZnO multipods submicron wires and spherical structures and their  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcSEP  a18236-182420 v1103 a<p>A simple method of vapor deposition for the shape selective synthesis of ZnO structures, namely, multipods, submicron wires, and spheres, has been successfully demonstrated. A plausible growth mechanism based on the studies of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) is proposed. Our studies suggest that the growth of a multipod structure is governed by the screw dislocation propagation while the vapor-liquid-solid (VLS) mechanism is responsible for the formation of submicron wires and spheres. Moreover, the flow rate of the carrier gas plays a crucial role in governing the morphology. Further, these structures exhibit an enhanced field emission behavior. The nonlinearity in the Fowler-Nordheim (F-N) plot, a characteristic feature of electron emission from semiconductors, is explained by considering the contributions from both the conduction and the valence bands of ZnO.</p>1 aRamgir, Niranjan, S.1 aLate, Dattatray, J.1 aBhise, Ashok, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aJoag, Dilip, S.1 aVijayamohanan, K.  uhttps://library.ncl.res.in/content/zno-multipods-submicron-wires-and-spherical-structures-and-their-unique-field-emission-001611nas a2200277   4500008004100000022001400041245005900055210005800114260007300172300001400245490000800259520071800267653002400985653001901009653002901028653000901057653000901066100002101075700002401096700002501120700002301145700002201168700003001190700002001220856009301240       2007                        eng d  a0169-433200aField emission investigations of RuO2-doped SnO2 wires0 aField emission investigations of RuO2doped SnO2 wires  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a9159-91630 v2533 a<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emission10afield enhancement factor10aRuO210aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigations-ruo2-doped-sno2-wires-001813nas a2200277   4500008004100000022001400041245007000055210006400125260006900189300001400258490000800272520089200280653002401172653001801196653002901214653002001243653001401263100002101277700002401298700002501322700002301347700002201370700003001392700002001422856009301442       2008                        eng d  a0040-609000aRuO(2) doped SnO(2) nanobipyramids on Si (100) as a field emitter0 aRuO2 doped SnO2 nanobipyramids on Si 100 as a field emitter  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUL  a6388-63910 v5163 a<p>Thin films of RuO(2): SnO(2) nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0. 1 gA/ cm 2 current density has been found to be 0.2 V/mu m. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of I tA is observed to be good. Our field emission results on RuO(2): SnO(2) nanobipyramids indicate that, RuO(2): SnO(2) nanobipyramids are a potential candidate for futuristic field emission based devices. (c) 2008 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emitter10afield enhancement factor10aruthenium oxide10atin oxide1 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/ruo2-doped-sno2-nanobipyramids-si-100-field-emitter-001786nas a2200289   4500008004100000022001400041245015900055210006900214260010600283300001200389490000700401520064700408653001501055653003001070653003901100653002101139653003401160100002501194700002101219700002001240700002301260700002601283700002001309700001901329700002201348856012601370       2008                        eng d  a0042-207X00aScanning tunneling microscopic and field emission microscopic studies of nanostructured molybdenum film synthesized by electron cyclotron resonance plasma0 aScanning tunneling microscopic and field emission microscopic st  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcSEP  a435-4430 v833 a<p>Cathodic sputtering is demonstrated to be effective in synthesizing thin films of molybdenum nanoparticles. An electron cyclotron resonance plasma reactor has been used as the source. The particle size distribution is found to be controllable by proper choice of the cathodic bias potential. Sizes ranging between 20 and 30 nm deposited at the optimum bias potential are found to exhibit a self assembled structure as observed by scanning tunneling microscopy. Field emission microscopic studies on these films supported on W have exhibited very stable emission current over a period of 3 h. (C) 2008 Elsevier Ltd. All rights reserved.</p>10aECR plasma10aField emission microscopy10aHollow cathode chemical sputtering10aMo nanoparticles10aScanning tunneling microscopy1 aPurohit, Vishwas, S.1 aBhise, Ashok, B.1 aDey, Shirshendu1 aMore, Mahendra, A.1 aDharmadhikari, C., V.1 aJoag, Dilip, S.1 aPasricha, Renu1 aBhoraskar, S., V.  uhttps://library.ncl.res.in/content/scanning-tunneling-microscopic-and-field-emission-microscopic-studies-nanostructured-001771nas a2200265   4500008004100000022001400041245006200055210006100117260007300178300001400251490000700265520091100272653002201183653001301205653001901218653000901237100002101246700002401267700002301291700002301314700002201337700003001359700002001389856009601409       2009                        eng d  a1293-255800aField emission investigation of single Fe-doped SnO2 wire0 aField emission investigation of single Fedoped SnO2 wire  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1114-11170 v113 a<p>Tin oxide submicronwires doped with Fe element were prepared by the thermal evaporation method. Morphological and structural characterizations revealed wires with sub micron size and crystalline in nature. The field electron emission from the single Fe:SnO2 wire was carried out in conventional field emission microscope. The Fowler-Nordheim plot obtained from I-V characteristics of the wire showed a linear behavior typical that of metal. The field enhancement factor estimated from the slope of the F-N plot is 7455 cm(-1), indicating that the field emission is from nanometric features of the emitter. A current density of 10 A/cm(2) has been obtained at an applied field of 4.845 x 10(3) V/mu m. The field emission current-time record at a current level of 1 mu A for more than 3 h duration is promising for various field emissions based applications. (C) 2009 Published by Elsevier Masson SAS.</p>10aCurrent stability10aFe doped10afield emission10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, Bhaskar, R.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigation-single-fe-doped-sno2-wire-001688nas a2200289   4500008004100000022001400041245008700055210006900142260009200211300001800303490000600321520071700327653001801044653001101062653001101073653001901084653001401103653000901117100002101126700002401147700001401171700002301185700002201208700003001230700002001260856011801280       2010                        eng d  a1745-808000aFabrication of In-doped SnO2 nanowire arrays and its field emission investigations0 aFabrication of Indoped SnO2 nanowire arrays and its field emissi  a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcDEC  aPII 9312836630 v53 a<p>The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mu A/cm2 is drawn from the emitter at an applied field of 4 V/mu m. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mu A is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.</p>10acold cathodes10adevice10aDoping10afield emission10aNanowires10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/fabrication-doped-sno2-nanowire-arrays-and-its-field-emission-investigations-001879nas a2200253   4500008004100000022001400041245010200055210006900157260007300226300001400299490000800313520098400321653001601305653001901321653001801340653001401358100002101372700002401393700002101417700001901438700002001457700002201477856012601499       2011                        eng d  a0169-433200aField emission studies of silver nanoparticles synthesized by electron cyclotron resonance plasma0 aField emission studies of silver nanoparticles synthesized by el  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a7184-71890 v2573 a<p>Field emission has been studied for silver nanoparticles (25-200 nm), deposited within a cylindrical silver target in an electron cyclotron resonance (ECR) plasma. Particle size distribution was controlled by optimum biasing voltages between the chamber and the target. Presence of non-oxidized silver was confirmed from the X-Ray diffraction analysis; however, thin protective layer of oxide was identified from the selective area electron diffraction pattern obtained with transmission electron microscopy. The silver nanoparticles were seen to exhibit hilly pointed like structures when viewed under the atomic force microscopy (AFM). The emissive properties of these particles were investigated by field emission microscopy. It is found that this technique of deposition is ideal for formation of nanoparticles films on different substrate geometries with size controllability as well as its application to emission devices. (C) 2011 Elsevier B.V. All rights reserved.</p>10aCold plasma10afield emission10aNanoparticles10athin film1 aPurohit, Vishwas1 aMazumder, Baishakhi1 aBhise, Ashok, B.1 aPoddar, Pankaj1 aJoag, Dilip, S.1 aBhoraskar, S., V.  uhttps://library.ncl.res.in/content/field-emission-studies-silver-nanoparticles-synthesized-electron-cyclotron-resonance-0