02631nas a2200289   4500008004100000245014600041210006900187260000800256300001400264490000600278520164500284653001801929653001801947653002701965653001701992653002402009653003402033653000802067100001702075700001902092700001802111700002302129700001902152700001902171700001902190856013202209       2024                        eng d00aScanning tunneling microscopy investigation of synaptic behavior in AgInS2 quantum dots: effect of ion transport in neuromorphic applications0 aScanning tunneling microscopy investigation of synaptic behavior  cMAR  a7226-72360 v73 a<p>
	Scanning tunneling microscopy (STM) is a powerful technique for investigating the nanoscale properties of functional materials. Additionally, scanning tunneling spectroscopy (STS) facilitates the determination of the local density of states (LDOS) within the material. In this study, we present an exploration of the resistive switching (RS) properties and neuromorphic computing capabilities of individual AgInS2 quantum dots, utilizing STM and STS techniques. By examining the material's bandgap and its temperature dependence, we uncover a nonlinear variation below the Debye temperature and a linear trend at higher temperatures. Moreover, STS measurements demonstrate changes in the conducting states induced by localized pulses, further confirming the unique characteristics of the quantum dots. The experimental devices constructed by using these quantum dots effectively replicate the RS properties observed at the nanoscale. To assess the neuromorphic application of the devices, pulse transient measurements simulating the learning and forgetting processes were conducted. The gradual set and reset processes successfully mimic the information retention and erasure capabilities essential for neuromorphic computing. Notably, the resistive switching mechanism in these devices is attributed to localized ionic transport, which highlights the significant involvement of ionic species in the observed RS behavior. The outcomes of this study contribute to the fundamental understanding of RS properties in single AgInS2 quantum dots and offer valuable insights into their potential applications in neuromorphic computing.</p>
10acorona poling10aIon transport10aneuromorphic computing10aquantum dots10aresistive switching10aScanning tunneling microscopy10aSTS1 aBetal, Atanu1 aChetia, Anupam1 aBera, Jayanta1 aSaikia, Dibyajyoti1 aSharma, Ashish1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/scanning-tunneling-microscopy-investigation-synaptic-behavior-agins2-quantum-dots-effect-ion