01976nas a2200217   4500008004100000022001400041245013700055210006900192260000800261300001600269490000700285520120700292100001601499700001701515700001801532700002301550700001801573700001901591700001901610856012901629       2023                        eng d  a1463-907600aPhotogating induced high sensitivity and speed from heterostructure of few-layer MoS2 and reduced graphene oxide-based photodetector0 aPhotogating induced high sensitivity and speed from heterostruct  cNOV  a30419-304270 v253 a<p>
	Over the past few years, two-dimensional transition metal dichalcogenides (2D-TMDC) have attracted huge attention due to their high mobility, high absorbance, and high performance in generating excitons (electron and hole pairs). Especially, 2D molybdenum disulfide (MoS2) has been extensively used in optoelectronic and photovoltaic applications. Due to the low photo-to-dark current ratio (I-photo/dark) and low speed, pristine MoS2-based devices are unsuitable for these applications. So, they need some improvements, i.e., by adding layers or decorating with materials of complementary majority charges. In this work, we decorated pristine MoS2 with reduced graphene oxide (rGO) and got improved dark current, I-photo/dark, and response time. When we compared the performance of pristine MoS2 based device and rGO decorated MoS2 based device, the rGO/MoS2-based device showed an improved performance of responsivity of 3.36 A W-1, along with an I-photo/dark of about 154. The heterojunction device exhibited a detectivity of 4.75 x 10(12) Jones, along with a very low response time of 0.184 ms. The stability is also outstanding having the same device performance even after six months.</p>
1 aDas, Chayan1 aKumar, Ashok1 aKumar, Suresh1 aDambhare, Neha, V.1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/photogating-induced-high-sensitivity-and-speed-heterostructure-few-layer-mos2-and-reduced