01746nas a2200193   4500008004100000022001400041245010000055210006900155260000900224300001400233490000700247520107400254100001701328700001801345700001901363700002201382700001901404856012901423       2023                        eng d  a1463-907600aCharge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor0 aCharge trapped CdS quantum dot embedded polymer matrix for a hig  cFEB   a3737-37440 v253 a<p>
	The data storage requirement in the digital world is increasing day by day with the advancement of the internet of things. In this respect, nonvolatile resistive random-access memory is an option that provides high density and low power data storage capabilities. In this work, zero-dimensional colloidal CdS quantum dots and a polymer composite at an appropriate ratio were used to fabricate a memristive device. Comparison with a pristine CdS quantum dot-based device reveals that a surrounding matrix around the quantum dots is needed for observing memristive behavior. The quantum dots embedded in the polymer matrix device showed extremely stable electrical switching behavior that can be operated for more than 300 cycles and 60 000 seconds. Moreover, the device needs extremely low power to operate at a very high speed. The smooth surface morphology dictates a charge trapping mechanism for the switching phenomenon; however, an interplay between different charge transport mechanisms leads to the fast switching and high on-off ratio of the device.</p>
1 aBetal, Atanu1 aBera, Jayanta1 aSharma, Ashish1 aRath, Arup, K. K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/charge-trapped-cds-quantum-dot-embedded-polymer-matrix-high-speed-and-low-power-memristor