02185nas a2200193   4500008004100000022001400041245012500055210006900180260000800249300001100257490000800268520149100276100001801767700001701785700001901802700002201821700001901843856012901862       2022                        eng d  a0003-695100aColloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability0 aColloidal MoS2 quantum dots for highperformance low power resist  cJUN  a2535020 v1203 a<p>
	Conventional memory technologies are facing enormous problems with downscaling, and are hence unable to fulfill the requirement of big data storage generated by a huge explosion of digital information. A resistive random access memory device (RRAM) is one of the most emerging technologies for next-generation computing data storage owing to its high-density stacking, ultrafast switching speed, high non-volatility, multilevel data storage, low power consumption, and simple device structure. In this work, colloidal MoS2 quantum dots (QDs) embedded in an insulating matrix of poly-(4vinylpyridine) (PVP) were used as an active layer to fabricate a RRAM device. The MoS2 QDs-PVP based RRAM device reveals an excellent nonvolatile resistive switching (RS) behavior with a maximum current on-off ratio (I-ON/I-OFF) of 10(5). High endurance, long retention time, and successive ``write-read-erase-read'' cycles indicate high-performance RRAM characteristics. The ultimate power consumption by this RRAM device is considerably low for energy saving. In addition, the MoS2 QDs-PVP based device shows RS behavior even at 130 degrees C. High I-ON/I-OFF, low operating power, high endurance, long retention time, and excellent stability with temperatures reveal that the MoS2 QDs-PVP based device can be a promising candidate for high-performance low power RRAM devices that can be operated at relatively higher temperatures. Published under an exclusive license by AIP Publishing.</p>
1 aBera, Jayanta1 aBetal, Atanu1 aSharma, Ashish1 aRath, Arup, Kumar1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/colloidal-mos2-quantum-dots-high-performance-low-power-resistive-memory-devices-excellent