02048nas a2200241   4500008004100000245009300041210006900134260000900203300001400212490000600226520128400232653002301516653001201539653001901551653001701570653001401587100001701601700001801618700001901636700001901655700001901674856011301693       2022                        eng d00aComposition and surface morphology invariant high on-off ratio from an organic memristor0 aComposition and surface morphology invariant high onoff ratio fr  cMAR   a1109-11160 v43 a<p>Material composition plays a crucial role in the device performance; thus, nonvolatile memory devices from a small molecule named 5-mercapto-1-methyl tetrazole (MMT) in an insulating polymer matrix of poly(4-vinyl pyridine) (PVP) were fabricated. The composition of the active material in the device was varied to observe its influence on the device's electronic properties. The device with a more or less weight ratio of MMT has a much smoother surface morphology, whereas when the contributions of MMT and PVP were equal, the average surface roughness increased. However, the maximum on-off current ratio for all the devices is 10(5), suggesting that the MMT molecule does not show any change in its characteristic properties when surrounded by an insulating material. When the device was fabricated without the polymer matrix, the surface morphology of the device completely changed as it was filled with large holes. These holes provide short-circuited pathways for the current by forming the direct metal contact between the top and bottom electrodes. The carrier transport through these devices follows various conduction mechanisms. Some of the dominating conduction mechanisms are direct tunneling and trap-free and trap-assisted space-charge-limited conduction.</p>
10aNonvolatile memory10aPolymer10asmall molecule10aspace-charge10atunneling1 aBetal, Atanu1 aBera, Jayanta1 aSharma, Ashish1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/composition-and-surface-morphology-invariant-high-ratio-organic-memristor