02103nas a2200241   4500008004100000022001400041245009400055210006900149260000900218300001000227490000600237520130400243100001901547700002601566700002301592700002101615700002101636700002301657700001901680700002001699700001601719856012601735       2017                        eng d  a2045-232200aCrystallisation-enhanced bulk hole mobility in phenothiazine-based organic semiconductors0 aCrystallisationenhanced bulk hole mobility in phenothiazinebased  cAPR   a462680 v73 a<p>A series of three novel donor-acceptor systems based on C(3)-malononitrile-substituted phenothiazines was synthesised in good overall yields and their thermal, spectroscopic, and electrochemical properties were characterised. The compounds were prepared through a sequence of Ullmann-coupling, Vilsmeier-Haack formylation and Knoevenagel-condensation, followed by Suzuki-coupling reactions for introduction of aryl substitutents at C(7) position of the phenothiazine. The introduction of a donor unit at the C(7) position exhibited a weak impact on the optical and electrochemical characteristics of the compounds and led to amorphous films with bulk hole mobilities in the typical range reported for phenothiazines, despite the higher charge delocalisation as attested by computational studies. In contrast, highly ordered films were formed when using the C(7)-unsubstituted 3-malononitrile phenothiazine, exhibiting an outstanding mobility of 1 x 10(-3) cm(2) V-1 s(-1), the highest reported for this class of compounds. Computational conformational analysis of the new phenothizanes suggested that free rotation of the substitutents at the C(7) position suppresses the ordering of the system, thereby hampering suitable packing of the new materials needed for high charge carrier mobility.</p>1 aShinde, D., B.1 aSalunke, Jagadish, K.1 aCandeias, Nuno, R.1 aTinti, Francesca1 aGazzano, Massimo1 aWadgaonkar, P., P.1 aPriimagi, Arri1 aCamaioni, Nadia1 aVivo, Paola  uhttps://library.ncl.res.in/content/crystallisation-enhanced-bulk-hole-mobility-phenothiazine-based-organic-semiconductors