02026nas a2200253   4500008004100000245010900041210006900150260000800219300001400227490000800241520118200249100002101431700002001452700001901472700001801491700002201509700001901531700001901550700001901569700002101588700001901609700002101628856012301649       2017                        eng d00aCompositional dependence of electrical conduction in solution grown Zn1-xCrxSe thin films: a correlation0 aCompositional dependence of electrical conduction in solution gr  cMAR  a5070-50740 v28 3 aZinc selenide (ZnSe) has a typical band gap of 2.7 eV suitable for window application and can easily be synthesized using a liquid phase chemical bath deposition. An attempt is made to tune its band gap and other characteristics to cope with a maxima of the solar spectrum by deliberate addition of Cr3+. ZnSe and Zn1-xCrxSe (0 <= x <= 0.35) thin films were obtained under the controlled deposition conditions (temperature = 70 A degrees C, time = 210 min, pH = 10, etc). The compositional analysis showed Zn2+ replacement by Cr3+. The X-ray photoelectron spectroscopy revealed chemical states of the constituents Zn, Cr and Se as 2(+), 3(+) and 2(-) respectively. The electrical conductivity and thermo-power measurements in the 300-550 K temperature range showed semiconducting nature of the material and that the electrical conduction is of the n-type. The electrical conductivity is found to be increased continuously up to x = 0.05 and then decreased for further increase in x. The Hall-probe measurements also confirmed n-type conduction. The average Hall coefficient for pure ZnSe is -1.03 x 10(7) cm(3)/C whereas, it is -4.55 x 10(6) cm(3)/C for a sample with x = 0.35.1 aDeshmukh, S., L.1 aPingale, P., C.1 aChavan, G., T.1 aPawar, S., T.1 aPrakshale, V., M.1 aKamble, S., S.1 aJadkar, S., R.1 aChaure, N., B.1 aGopinath, C., S.1 aMaldar, N., N.1 aDeshmukh, L., P.  uhttps://library.ncl.res.in/content/compositional-dependence-electrical-conduction-solution-grown-zn1-xcrxse-thin-films