01262nas a2200145   4500008004100000245009500041210006900136260000800205300001600213490000700229520071400236100002200950700001900972856012500991       2009                        eng d00aInduce negative differential resistance in organic devices through a ferroelectric polymer0 aInduce negative differential resistance in organic devices throu  cJUN  a1116–11190 v103 a<p>We report how ferroelectric materials induce negative differential resistance (NDR) in organic devices. Fluorescein, which exhibits semiconducting current–voltage characteristics, shows NDR effect in a ferroelectric matrix. Here, we vary the concentration of fluorescein in the ferroelectric matrix to study its effect on NDR. We also show how the degree of polarization controls NDR. We infer that under a suitable bias, the ferroelectric polymer becomes polarized to facilitate electron-injection in the device followed by a double-reduction of fluorescein molecules. From the capacitance–voltage measurements, we substantiate the role of polarization in inducing NDR effect in organic molecules.</p>1 aRath, Arup, Kumar1 aPal, Amlan, J.  uhttps://library.ncl.res.in/content/induce-negative-differential-resistance-organic-devices-through-ferroelectric-polymer