01682nas a2200217   4500008004100000245007600041210006900117260000800186300002500194490000600219520094700225100002801172700002201200700003001222700002701252700001701279700001901296700001401315700002801329856010701357       2013                        eng d00aHeterovalent cation substitutional doping for quantum dot homojunctions0 aHeterovalent cation substitutional doping for quantum dot homoju  cDEC  aArticle number: 29810 v43 a<p>Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.</p>1 aStavrinadis, Alexandros1 aRath, Arup, Kumar1 ade Arquer, Pelayo, Garcia1 aDiedenhofen, Silke, L.1 aMagen, Cesar1 aMartinez, Luis1 aSo, David1 aKonstantatos, Gerasimos  uhttps://library.ncl.res.in/content/heterovalent-cation-substitutional-doping-quantum-dot-homojunctions