01814nas a2200241   4500008004100000022001400041245010700055210006900162260007300231300001200304490000800316520093400324653001701258653002901275653003201304100002201336700001801358700001701376700001401393700001701407700002201424856012601446       2005                        eng d  a0168-583X00aControlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation0 aControlled growth of silicon nanocrystallites in silicon oxide m  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a185-1900 v2393 a<p>We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO(x)) are irradiated with 150 MeV silver ions at fluence varying from 5 x 10(11) to 1 x 10(13) ions/cm(2). The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiO(x) matrix, caused by swift heavy ion irradiation. (c) 2005 Elsevier B.V. All rights reserved.</p>10aoxide matrix10asilicon nanocrystallites10aswift heavy ion irradiation1 aChaudhari, P., S.1 aBhave, T., M.1 aPasricha, R.1 aSingh, F.1 aKanjilal, D.1 aBhoraskar, S., V.  uhttps://library.ncl.res.in/content/controlled-growth-silicon-nanocrystallites-silicon-oxide-matrix-using-150-mev-ag-ion-0