02033nas a2200205   4500008004100000022001400041245009300055210006900148260007400217300001400291490000700305520127500312100002001587700001801607700001801625700002001643700002201663700002101685856012101706       2006                        eng d  a0957-452200aCharacterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route0 aCharacterization of Cd1xZnxSe thin films deposited at low temper  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC  a1055-10630 v173 a<p>Optoelectronic technologically important pseudo-binary Cd1-xZnxSe thin films with a variable composition ( 0 &lt; x &lt; 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd1-xZnxSe have been deposited on non-conducting glass substrate in tartarate bath containing Cd+2 and Zn+2 ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10(-7) to 10(-8) (Omega cm)(-1). All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.</p>1 aHankare, P., P.1 aChate, P., A.1 aAsabe, M., R.1 aDelekar, S., D.1 aMulla, Imtiaz, S.1 aGaradkar, K., M.  uhttps://library.ncl.res.in/content/characterization-cd1-xznxse-thin-films-deposited-low-temperature-chemical-route-0