01617nas a2200241   4500008004100000022001400041245007700055210006900132260007100201300001400272490000700286520077800293100001701071700002101088700001901109700002901128700001801157700002201175700001901197700002401216700003001240856010501270       2009                        eng d  a0897-475600aElectronic structure and catalytic study of solid solution of GaN in ZnO0 aElectronic structure and catalytic study of solid solution of Ga  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcJUL  a2973-29790 v213 a<p>Solid solutions of GaN in ZnO (Zn1-zGaz)(O1-xNx) (x and z &lt;= 0.15) have been prepared by simple solution combustion method, Except for minor changes in the lattice contraction, no significant change in the Wurtzite structure was observed. Raman and secondary ion mass spectrometry results show the direct Zn-N and Ga-N bonds in (Zn1-zGaz)(O1-xNx). Visible light absorption and XPS results demonstrate that N 2p states of nitride occupy the states above the O 2p valence band, and hence a change in optical band gap reduction occurs to similar to 2.5 eV from 3.37 eV for ZnO. Significant nitrogen fixation catalytic activity through NH3 formation has been observed at ambient pressure oil virgin (Zn1-zGaz)(O1-xNx) material, indicating its potential as a catalyst.</p>1 aMapa, Maitri1 aThushara, K., S.1 aSaha, Biswajit1 aChakraborty, Purushottam1 aJanet, C., M.1 aViswanath, R., P.1 aNair, Madhavan1 aMurty, K., V. G. K.1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/electronic-structure-and-catalytic-study-solid-solution-gan-zno-0