01351nas a2200181   4500008004100000022001400041245009800055210006900153260007400222300001200296490000700308520064500315100001800960700002000978700002000998700002101018856013001039       2012                        eng d  a0957-452200aStructural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film0 aStructural and surface morphological properties of chemically de  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR  a909-9120 v233 a<p>Preparation of layered type semiconductor Mo0.5W0.5S2- thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS2 and WS2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10(-3)-10(-2) (Omega cm)(-1).</p>1 aPatil, A., A.1 aHankare, P., P.1 aGaikwad, A., B.1 aGaradkar, K., M.  uhttps://library.ncl.res.in/content/structural-and-surface-morphological-properties-chemically-deposited-mo05w05s2-thin-film-0