02008nas a2200193   4500008004100000022001400041245013500055210006900190260011000259300001400369490000600383520117100389100002401560700002901584700002201613700002501635700003001660856012401690       2014                        eng d  a2040-336400aElectrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O0 aElectrochemical preparation of vertically aligned hollow CdSe na  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcAUG  a9148-91560 v63 a<p>Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of similar to 470 mu A cm(-2)) white in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2P on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.</p>1 aDebgupta, Joyashish1 aDevarapalli, Rami, Reddy1 aRahman, Shakeelur1 aShelke, Manjusha, V.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/electrochemical-preparation-vertically-aligned-hollow-cdse-nanotubes-and-their-p-n-0