01590nas a2200169   4500008004100000022001400041245011800055210006900173260011000242300001600352490000600368520083300374100002901207700003101236700002501267856012801292       2014                        eng d  a2050-748800aQuantum dot-decorated silicon nanowires as efficient photoelectrodes for photoelectrochemical hydrogen generation0 aQuantum dotdecorated silicon nanowires as efficient photoelectro  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcSEP  a13352-133580 v23 a<p>Quantum dot-decorated wide band gap semiconductors, such as TiO2, ZnO, SnO2, etc., which have electron mobilities of less than 200 cm(2) V-1 S-1 have been well studied as the photoelectrodes for photovoltaics and photoelectrochemical water splitting. Herein, we report CdSe quantum dot decorated-silicon nanowires (SiNWs) as photoelectrodes for photoelectrochemical water splitting. SiNWs have a comparatively higher electron mobility than metal oxides. A photocurrent density of around 6.1 mA cm(-2) was obtained for the CdSe/SiNWs photoelectrode, which is nearly five times higher than that for SiNWs alone and which also shows a good transient photocurrent response. The band energy level alignment was also studied between Si and CdSe by observing the corresponding flat band potentials from a Mott-Schottky analysis.</p>1 aDevarapalli, Rami, Reddy1 aKamaja, Chaitanya, Krishna1 aShelke, Manjusha, V.  uhttps://library.ncl.res.in/content/quantum-dot-decorated-silicon-nanowires-efficient-photoelectrodes-photoelectrochemical-0