01429nas a2200217   4500008004100000022001400041245005400055210005400109260008700163300001100250490000800261520069400269100002300963700002300986700002301009700002301032700001801055700002401073700002601097856008801123       2014                        eng d  a0003-695100aField emission properties of ZnO nanosheet arrays0 aField emission properties of ZnO nanosheet arrays  a1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScDEC  a2331010 v1053 a<p>{Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/mu m at 0.1 mu A/cm(2) and current density of 50.1 mu A/cm(2) at an applied field of 6.4 V/mu m with field enhancement factor</p>1 aNaik, Kusha, Kumar1 aKhare, Ruchita, T.1 aChakravarty, Disha1 aMore, Mahendra, A.1 aThapa, Ranjit1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar  uhttps://library.ncl.res.in/content/field-emission-properties-zno-nanosheet-arrays-0