@article { ISI:000244008300031,
	title = {Varistors based on Ta-doped TiO2},
	journal = {Ceramics International},
	volume = {33},
	number = {2},
	year = {2007},
	month = {MAR},
	pages = {301-303},
	publisher = {ELSEVIER SCI LTD},
	type = {Article},
	address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND},
	abstract = {<p>The nonlinear current (I)-voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.05-0.5 at.\%) of tantalum pentaoxide. For optimum compositions, the nonlinear coefficients are found to be in the range of 25-30 and the breakdown field strength (EB) is similar to 4000 V/cm. The obtained alpha- and E-B-values are higher than the previously reported values for TiO2 ceramics. The acceptor like surface states at the grain boundary adsorb oxygen during sintering and cooling, leading to formation of grain boundary barrier. The grain boundary barrier height (OB) is calculated using Schottky equation. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>},
	keywords = {Ceramics, Oxides, Schottky barrier, TiO2, varistor},
	issn = {0272-8842},
	doi = {10.1016/j.ceramint.2005.07.026},
	author = {Navale, S. C. and Murugan, A. Vadivel and Ravi, V.}
}
@article {44215,
	title = {Pt - g-C3N4 - (Au/TiO2): electronically integrated nanocomposite for solar hydrogen generation},
	journal = {International Journal of Hydrogen Energy},
	volume = {43},
	year = {2018},
	month = {JAN},
	pages = {601-613},
	type = {Article},
	abstract = {<p>A potential nanocomposite photocatalyst was designed by integrating Pt nanoclusters (co catalyst and electron sink) with graphitic carbon nitride (g-C3N4 (gcn)) (charge diffusion) and 0.5 wt \% Au containing Au-TiO2 (AuT) (plasmonic on semiconductor) for solar water splitting (SWS). Variety of Pt-gcn-AuTiO2 compositions has been evaluated for SWS under one sun conditions. Complexity of the photocatalyst was increased systematically from Au-TiO2, gcn-TiO2 to Pt-gcn-Au-TiO2 to explore the influence of different combinations. Electronic integration of charge separation/diffusion component (gcn) with light absorbing sensitizer components (Au and gcn), and co-catalyst (Pt) seems to be the critical factor to improve hydrogen yield (HY) or overall efficiency. Although addition of gcn increase the HY of composites, there is no SWS activity observed on bare TiO2 or gcn. Au or Pt on gcn enhances the charge separation effectively and interface between Au and/or Pt with gcn works as the Schottky barrier. A monodispersion of Au over TiO2 and Pt nanoclusters over gcn/AuTiO2 composite lead to the maximum solar hydrogen yield (1.52 mmol/h g) with an apparent quantum yield (AQY) of 7.5\%. Photoelectron and photoluminescence spectral studies confirm the electron transfer from Au to gcn, and Au and/or gcn to titania. A thorough physico-chemical investigation of various composites underscores the electronic integration aspects of the nanocomposite towards storage of electrons in the Pt co-catalyst and hence an effective charge separation and an increase in AQY. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.</p>},
	keywords = {Electronic integration, Photocatalysis, Schottky barrier, Solar hydrogen, water splitting},
	issn = {0360-3199},
	doi = {10.1016/j.ijhydene.2017.11.057},
	author = {Devaraji, Perumal and Gopinath, Chinnakonda S.}
}
@article {47752,
	title = {Resistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructures: an intriguing case of low H-field susceptibility of an E-field controlled active interface},
	journal = {ACS Applied Materials \& Interfaces},
	volume = {13},
	year = {2021},
	month = {NOV },
	pages = {54133-54142},
	type = {Article},
	abstract = {High-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (similar to 0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically {\textquoteleft}{\textquoteleft}active{\textquoteright}{\textquoteright} nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.},
	keywords = {charge trapping-detrapping, low external magnetic field, oxide-oxide interface, pulsed laser deposition, resistive switching, Schottky barrier},
	issn = {1944-8244},
	doi = {10.1021/acsami.1c15082},
	author = {Antad, Vivek and Shaikh, Parvez A. and Biswas, Abhijit and Rajput, Shatruhan Singh and Deo, Shrinivas and Shelke, V, Manjusha and Patil, Shivprasad and Ogale, Satishchandra}
}
