@article { ISI:000263018200028,
	title = {Chemical bath deposition of CdS quantum dots on vertically aligned ZnO nanorods for quantum dots-sensitized solar cells},
	journal = {Electrochemistry Communications},
	volume = {11},
	number = {1},
	year = {2009},
	month = {JAN},
	pages = {103-106},
	publisher = {ELSEVIER SCIENCE INC},
	address = {360 PARK AVE SOUTH, NEW YORK, NY 10010-1710 USA},
	abstract = {<p>Formation of US quantum dots (Q dots) on the vertically aligned ZnO nanorods electrode was carried out by chemical bath deposition. The diameter and thickness of ZnO nanorods are similar to 100-150 nm and similar to 1.6 mu m, respectively, and CdS Q dots on ZnO nanorods have a diameter of smaller than 15 nm. In application of the Q dots-sensitized solar cells, composite film exhibited a power conversion efficiency of 0.54\% under air mass 1.5 condition (80 mW/cm(2)), and incident-photon-to-current conversion efficiency showed 18.6\%. (c) 2008 Elsevier B.V. All rights reserved.</p>},
	keywords = {Chemical bath deposition, Photosensitization, quantum dots, solar cells, Wet-chemical process},
	issn = {1388-2481},
	doi = {10.1016/j.elecom.2008.10.042},
	author = {Lee, Wonjoo and Min, Sun Ki and Dhas, Vivek V. and Ogale, Satishchandra B. and Han, Sung-Hwan}
}
@article { ISI:000296558300011,
	title = {Chemical deposition of CuInSe2 thin films by photoelectrochemical applications},
	journal = {Journal of Alloys and Compounds},
	volume = {511},
	number = {1},
	year = {2012},
	month = {JAN},
	pages = {50-53},
	publisher = {ELSEVIER SCIENCE SA},
	address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
	abstract = {<p>Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12\% and 0.82\%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.</p>},
	keywords = {Chemical bath deposition, Flat band potential, Photo response, Power output, Spectral response},
	issn = {0925-8388},
	doi = {10.1016/j.jallcom.2011.04.084},
	author = {Hankare, P. P. and Rathod, K. C. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Mulla, Imtiaz S.}
}
