@article {48382,
	title = {Flexible ultracapacitor device fabricated with an organic electrode material- naphthalene diimide nitrile/reduced graphene oxide},
	journal = {Journal of Energy Storage},
	volume = {56},
	year = {2022},
	month = {DEC},
	pages = {106036},
	type = {Article},
	abstract = {<p>
	In this work, we have demonstrated a high-performance flexible supercapacitor electrode based on reduced graphene oxide (rGO) and naphthalene diimide nitrile (NDI-CN) composite. The rGO/NDI-CN composite was prepared by a simple approach. This composite was well characterized using various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) etc. Besides, the pi -pi stacking of NDI-CN on rGO surface was confirmed using UV-vis and FTIR techniques. As fabricated rGO/NDI-CN composite was examined as an electrode material for the supercapacitor applications. The rGO/NDI-CN electrode has delivered an excellent specific capacitance (C-sp) of 336 F g(-1) at 0.5 A g(-1)current density. The fabricated supercapacitor (SC) displays robustness with 80 \% capacitance retention over 10,000 cycles at higher current density of 10 A g(-1). To further explore the real-world application of electrode materials, the corresponding flexible supercapacitor was designed and examined. The flexible device exhibited an energy density of 9.54 mu Wh cm(-2) at a power density of 0.3 mWcm(-2). These results confirmed that the rGO/NDI-CN electrode material has good potential as an energy storage device. Furthermore, the facile construction and fabrication of flexible device displayed operation of LED when fully charged. The assembled flexible supercapacitor device could be bent and twisted, signifying the potential to be used in practical applications in various high-performance electrochemical devices.</p>
},
	keywords = {flexible supercapacitor, Naphthalene diimide, Organic molecule electrodes, pi -pi interaction, rGO},
	issn = {2352-152X},
	doi = {10.1016/j.est.2022.106036},
	author = {Deshmukh, Ashvini B. and Biradar, Madan R. and Pawar, Meenakshi D. and Bhosale, Sidhanath V. and Shelke, Manjusha V.}
}
@article {49639,
	title = {High-performance photodetector from p-n junction of vertically aligned SnS2 and reduced graphene oxide},
	journal = {ACS Applied Electronic Materials},
	volume = {6},
	year = {2024},
	month = {SEP},
	pages = {6965-6973},
	type = {Article},
	abstract = {<p>
	Semiconducting 2D transition metal dichalcogenides (TMDC) became very popular in photodetection due to their high mobility and high rate of generating electron and hole pairs. Over the past decade, MoS2 and WS2 became the most popular TMDC for several applications. On the other hand, due to the complex synthesis process compared to MoS2 and WS2, SnS2 became a less popular 2D material for photodetection. We synthesized vertically aligned SnS2 flakes by a chemical vapor deposition (CVD) process with three temperature zones with controlled argon (Ar) gas flow. Pristine SnS2-based devices are not very suitable for photodetection applications because of their low photo-to-dark current ratio (I ph /I (dark) ), high response time, and low stability. So, they need to be decorated with oppositely doped materials. We decorated pristine SnS2-based devices with rGO nanoparticles, which significantly increased the device{\textquoteright}s performance. We found a high responsivity (R) of 1.33 A/W, detectivity (D) of 6.95 x 10(11) Jones, I ph /I dark of 102, and a rise time of 0.241 ms (fall time of 1.318 ms) with the rGO decorated SnS2-based device.</p>
},
	keywords = {2D-SnS2, CVD, p-njunction, photodetector, rGO},
	doi = {10.1021/acsaelm.4c01311},
	author = {Das, Chayan and Kumar, Suresh and Dambhare, Neha V. and Kumar, Mahesh and Rath, Arup K. and Sahu, Satyajit}
}
