@proceedings {42926,
	title = {One-pot thermal evaporation synthesis of CdS-RGO hetrostructure and its field emission study},
	year = {2015},
	month = {JUL},
	pages = {82-83},
	publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA},
	address = {Guangzhou, Peoples R China},
	abstract = {<p>CdS-RGO heterostructure was synthesized by thermal evaporation method. The as-synthesized CdS-RGO heterostructure was characterized using X-ray Diffraction, SEM, and EADX, before field emission (FE) studies. The FE characteristics of a planar emitter made up of as-synthesized CdS-RGO heterostructures were measured at the base pressure 1x10(-8) mbar. The synthesized CdS-RGO heterostructure emitter is found to deliver a current density similar to 70 mu A/cm(2) at an applied electric field of similar to 4.7 V/mu m. Moreover, the nanocomposite shows excellent emission stability without significant current degradation making CdS-RGO heterostructure as a promising electron source for practical applications in various vacuum nano-microelectronic devices.</p>},
	author = {Bansode, Sanjeewani R. and Khare, Ruchita T. and More, Mahendra A. and Late, Dattatray J.}
}
