@article { ISI:000334078500086,
	title = {Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets (vol 104, 081911, 2014)},
	journal = {Applied Physics Letters},
	volume = {104},
	number = {12},
	year = {2014},
	month = {MAR},
	pages = {129901},
	publisher = {AMER INST PHYSICS},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	issn = {0003-6951},
	doi = {10.1063/1.4869463},
	author = {Thripuranthaka, M. and Kashid, Ranjit V. and Rout, Chandra Sekhar and Late, Dattatray J.}
}
@article { ISI:000332619100046,
	title = {Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets},
	journal = {Applied Physics Letters},
	volume = {104},
	number = {8},
	year = {2014},
	month = {FEB},
	pages = {081911},
	publisher = {AMER INST PHYSICS},
	address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
	abstract = {We have systematically investigated the temperature dependent Raman spectroscopy behavior of a few layered MoS2 and WS2 nanosheets synthesized using simple hydrothermal method. Our result reveals A(1g) and E-2g(1) modes soften as temperature increases from 77 K to 623 K. This behavior can be explained in terms of a double resonance process which is active in single-and few layer thick nanosheets. The frequency shifts and peak broadening can provide unambiguous, nondestructive, and accurate information of a few layered MoS2 and WS2. This mechanism can also be applicable in characterizing the structural, optical, electronic, and vibrational properties of other emerging layered materials. (c) 2014 AIP Publishing LLC.},
	issn = {0003-6951},
	doi = {10.1063/1.4866782},
	author = {Thripuranthaka, M. and Kashid, Ranjit V. and Rout, Chandra Sekhar and Late, Dattatray J.}
}
@article {44488,
	title = {Temperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets},
	journal = {Diamond and Related Materials},
	volume = {84},
	year = {2018},
	month = {APR },
	pages = {146-156},
	type = {Journal Article},
	abstract = {<p>Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G' bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.</p>},
	keywords = {graphene, high pressure, Phonon, Plasma treated graphene, Raman spectroscopy},
	issn = {9259635},
	doi = {10.1016/j.diamond.2018.03.021},
	author = {Pawbake, Amit S. and Mishra, K. K. and Machuno, Luis G. B. and Gelamo, Rogerio V. and Ravindranathan, T. R. and Rout, Chandra Sekhar and Late, Dattatray J.}
}
