@article { ISI:000342328300031,
	title = {Pulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies},
	journal = {ACS Applied Materials \& Interfaces},
	volume = {6},
	number = {18},
	year = {2014},
	month = {SEP},
	pages = {15881-15888},
	publisher = {AMER CHEMICAL SOC},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {<p>We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.</p>},
	keywords = {field emission, MoS2, photodiode heterostructures, pulsed laser deposition, thin film},
	issn = {1944-8244},
	doi = {10.1021/am503464h},
	author = {Late, Dattatray J. and Shaikh, Parvez A. and Khare, Ruchita T. and Kashid, Ranjit V. and Chaudhary, Minakshi V. and More, Mahendra A. and Ogale, Satishchandra B.}
}
@article {43633,
	title = {Promising field electron emission performance of vertically aligned one dimensional (1D) brookite (beta) TiO2 nanorods},
	journal = {RSC Advances},
	volume = {6},
	year = {2016},
	month = {OCT},
	pages = {98722-98729},
	abstract = {We evidence field-electron emission (FE) studies on the large-area array of one-dimensional (1D) brookite (beta) TiO2 nanorods. The pure 1D beta-TiO2 nanorods of 10 nm width and 760 nm long were synthesized on Si substrate utilizing hot-filament metal vapor deposition technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis evidenced the beta-TiO2 nanorods to be composed of orthorhombic crystals in brookite (beta) phase. X-ray photoemission spectroscopy (XPS) revealed the formation of pure stoichiometric (i.e. 1 : 1.98) 1D TiO2 nanorods. The values of turn-on field, required to draw current density of 10 mA cm(-2), was observed 3.9 V mu m(-1) for pristine 1D beta-TiO2 nanorods emitters, which were found significantly lower than doped/undoped 1D TiO2 nanostructures (i.e. nanotubes, nanowires, nanorods) based field emitters. The enhanced FE behavior of the TiO2/Si emitter can be attributed to modulation of electronic properties due to the high aspect ratio of vertically aligned TiO2 nanorods. Furthermore, the orthodox emission situation of pristine TiO2/Si emitters exhibit good emission stability and reveal their potentials as promising FE material.},
	doi = {10.1039/c6ra20747b},
	author = {Devan, Rupesh S. and Ma, Yuan-Ron and More, Mahendra A. and Khare, Ruchita T. and Antad, Vivek V. and Patil, Ranjit A. and Thakare, Vishal P. and Dhayal, Rajendra S. and Schmidt-Mende, Lukas}
}
