@article { ISI:000377203300030,
	title = {Electronic structure and properties of layered gallium telluride},
	journal = {Chemical Physics Letters},
	volume = {651},
	year = {2016},
	month = {MAY},
	pages = {148-154},
	publisher = {ELSEVIER SCIENCE BV},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {<p>Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.</p>},
	issn = {0009-2614},
	doi = {10.1016/j.cplett.2016.03.045},
	author = {Shenoy, U. Sandhya and Gupta, Uttam and Narang, Deepa S. and Late, Dattatray J. and Waghmare, Umesh V. and Rao, C. N. R.}
}
@article {43577,
	title = {Thickness tunable transport in alloyed WSSe field effect transistors},
	journal = {Applied Physics Letters},
	volume = {109},
	year = {2016},
	month = {OCT},
	pages = {Article Number: 142101},
	abstract = {We report the field effect transistor characteristics of exfoliated transition metal dichalcogenide alloy tungsten sulphoselenide. WSSe is a layered material of strongly bonded S-W-Se atoms having weak interlayer van der Waals forces with a significant potential for spintronic and valleytronic applications due to its polar nature. The X-ray photoelectron spectroscopy measurements on crystals grown by the chemical vapor transport method indicate a stoichiometry of the form WSSe. We report flake thickness tunable transport mechanism with n-type behavior in thin flakes (<= 11 nm) and ambipolarity in thicker flakes. The devices with flake thicknesses of 2.4 nm-54.8nm exhibit a maximum electron mobility of similar to 50 cm(2)/V s along with an I-ON/I-OFF ratio > 10(6). The electron Schottky barrier height values of 35 meV and 52meV extracted from low temperature I-V measurements for 3.9 nm and 25.5 nm thick flakes, respectively, indicate that an increase in hole current with thickness is likely due to lowering of the bandgap through an increase in energy of the valence band maximum. Published by AIP Publishing.},
	doi = {10.1063/1.4964289},
	author = {Karande, Shruti D. and Kaushik, Naveen and Narang, Deepa S. and Late, Dattatray and Lodha, Saurabh}
}
