@article { ISI:000238250300028,
	title = {Field emission studies of novel ZnO nanostructures in high and low field regions},
	journal = {Nanotechnology},
	volume = {17},
	number = {11},
	year = {2006},
	month = {JUN},
	pages = {2730-2735},
	publisher = {IOP PUBLISHING LTD},
	address = {DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND},
	abstract = {<p>A study of the field emission characteristics of novel structures of ZnO, namely marigolds, multipods and microbelts, has been carried out in both the close proximity configuration and the conventional field emission microscope. The use of a conventional field emission microscope overcomes the drawback of arc formation at high field values. The nonlinearity in the Fowler - Nordheim ( F - N) plot, a characteristic feature of semiconductors has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability exhibited by these structures is also promising for future device applications.</p>},
	issn = {0957-4484},
	doi = {10.1088/0957-4484/17/11/003},
	author = {Ramgir, Niranjan S. and Late, Dattatray J. and Bhise, Ashok B. and Mulla, Imtiaz S. and More, Mahendra A. and Joag, Dilip S. and Pillai, Vijayamohanan K.}
}
@article { ISI:000249834900020,
	title = {Field emission investigations of RuO2-doped SnO2 wires},
	journal = {Applied Surface Science},
	volume = {253},
	number = {23},
	year = {2007},
	month = {SEP},
	pages = {9159-9163},
	publisher = {ELSEVIER SCIENCE BV},
	type = {Article},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>},
	keywords = {doped semiconductor, field emission, field enhancement factor, RuO2, SnO2},
	issn = {0169-4332},
	doi = {10.1016/j.apsusc.2007.05.058},
	author = {Bhise, Ashok B. and Late, Dattatray J. and Ramgir, Niranjan S. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.}
}
