@article { ISI:000225856600034,
	title = {Synthesis of Ce0.75Zr0.25O2 at 100 degrees C},
	journal = {Ceramics International},
	volume = {31},
	number = {1},
	year = {2005},
	month = {JAN},
	pages = {211-213},
	publisher = {ELSEVIER SCI LTD},
	address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND},
	abstract = {<p>A simple gel to crystal conversion route has been used for the preparation of Ce0.75Zr0.25O2 phase at 80-100degreesC under refluxing conditions. Freshly prepared metal hydroxides gel from cerium and zirconium salt solution is allowed to crystallize under refluxing and stirring conditions for 4-10 h. Formation of nano crystallites of Ce0.75Zr0.25O2 is confirmed by X-ray diffraction (XRD). Transmission electron microscopy (TEM) investigations revealed the average particle size of these powders to be 5 nm. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.</p>},
	keywords = {CeO2, chemical preparation, Electron microscopy, powders, X-ray methods},
	issn = {0272-8842},
	doi = {10.1016/j.ceramint.2004.04.009},
	author = {Dhage, S. R. and Gaikwad, S. R. and Muthukumar, P. and Ravi, V.}
}
@article { ISI:000244008300028,
	title = {Influence of surfactant on ZnO varistors},
	journal = {Ceramics International},
	volume = {33},
	number = {2},
	year = {2007},
	month = {MAR},
	pages = {289-291},
	publisher = {ELSEVIER SCI LTD},
	type = {Article},
	address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND},
	abstract = {<p>ZnO varistors with and without surfactant such as sodium dodecyl sulphate (SIDS) are prepared by nitrate-combustion process. The samples were identically heat treated and sintered at 1000 degrees C for 12 h to study the influence of the surfactant on the nonlinear electrical properties of polycrystalline ZnO. It is observed that the nonlinear coefficient decreases marginally (alpha = 35) for samples prepared with surfactant, whereas breakdown field (E-B = 130 V/mm) decreased significantly. The corresponding parameters for the samples synthesized without surfactant are alpha = 45 and E-B = 400 V/mm. Hence, this method can be used for the manufacture of varistors with low to moderate breakdown fields. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>},
	keywords = {Chemical synthesis, Semiconductors, X-ray methods, ZnO},
	issn = {0272-8842},
	doi = {10.1016/j.ceramint.2005.08.010},
	author = {Dhage, S. R. and Navale, S. C. and Ravi, V.}
}
