@article { ISI:000272052200068,
	title = {Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2},
	journal = {Applied Physics Letters},
	volume = {95},
	number = {20},
	year = {2009},
	month = {NOV},
	pages = {203502},
	publisher = {AMER INST PHYSICS},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	abstract = {<p>Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.</p>},
	keywords = {cobalt, Doping, magnetic switching, random-access storage, titanium compounds, vacancies (crystal), valency},
	issn = {0003-6951},
	doi = {10.1063/1.3263713},
	author = {Bogle, Kashinath A. and Bachhav, Mukesh N. and Deo, Meenal S. and Valanoor, Nagarajan and Ogale, Satishchandra B.}
}
@article { ISI:000294359100090,
	title = {Evidence of lateral heat transfer during laser assisted atom probe tomography analysis of large band gap materials},
	journal = {Applied Physics Letters},
	volume = {99},
	number = {8},
	year = {2011},
	month = {AUG},
	pages = {Article No. 084101},
	publisher = {AMER INST PHYSICS},
	type = {Article},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	abstract = {<p>Investigation of wustite (FeO), iron (Fe), and silicon (Si) specimens by infrared laser assisted three dimensional atom probe tomography shows evidence of confined surface absorption of the laser energy as the mechanism of laser assisted field evaporation for high band gap materials. The absorption region is shown to be located on the laser illumination side, close to the specimen apex. A simple model based on thermal diffusivity and spatial extent of the absorption region is derived and applied to the experimental results. The values of thermal diffusivity thus obtained are in good agreement with the published data. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622647]</p>},
	issn = {0003-6951},
	doi = {10.1063/1.3622647},
	author = {Bachhav, Mukesh N. and Danoix, R. and Vurpillot, F. and Hannoyer, Beatrice and Ogale, Satishchandra B. and Danoix, F.}
}
