@article { ISI:000241849900010,
	title = {Novel chemical synthetic route and characterization of zinc selenide thin films},
	journal = {Journal of Physics and Chemistry of Solid},
	volume = {67},
	number = {11},
	year = {2006},
	month = {NOV},
	pages = {2310-2315},
	publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
	type = {Article},
	address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
	abstract = {<p>Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap {\textquoteleft}E-g{\textquoteright} for the film was found to be 2.81 eV and electrical conductivity in the order of 10(-8)(Omega cm)(-1) with n-type conduction mechanism. (c) 2006 Elsevier Ltd. All rights reserved.</p>},
	keywords = {chalcogenides, electronic materials},
	issn = {0022-3697},
	doi = {10.1016/j.jpcs.2006.05.001},
	author = {Hankare, P. P. and Chate, P. A. and Delekar, S. D. and Asabe, M. R. and Mulla, Imtiaz S.}
}
