@article { ISI:000369516100068,
	title = {Field emission properties of highly ordered low-aspect ratio carbon nanocup arrays},
	journal = {RSC Advances},
	volume = {6},
	number = {12},
	year = {2016},
	month = {JAN},
	pages = {9932-9939},
	publisher = {ROYAL SOC CHEMISTRY},
	address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
	abstract = {<p>Herein, we design and develop a field emission device utilizing highly porous carbon nanocup (CNC) films. These three-dimensional (3D) low-aspect ratio CNC structures were fabricated by a combination of anodization and chemical vapor deposition techniques. The low turn-on fields of 2.30 V mu m(-1) were observed to draw an emission current density of 1 mu A cm(-2) and a maximum emission current density of similar to 1.802 mA cm(-2) drawn at an applied field of similar to 4.20 V mu m(-1). The enhanced field emission behavior observed from the CNC films is attributed to an excellent field enhancement factor of 1645. The observed field emission properties of CNC arrays are attributed to a synergistic combination of high aspect ratio, nano-sized radius of curvature, highly organized distribution of the emitters over the whole area of specimen and lower screening effect of the CNC arrays. These observations shed light on the effect of the stacking carbon layers of CNC on their electronic properties and open up possibilities to integrate new morphologies of graphitic carbon in nanotechnology applications. Thus, the low turn on field, high emission current density and better emission current stability enable CNC based future field emission applications.</p>},
	issn = {2046-2069},
	doi = {10.1039/c5ra25682h},
	author = {Gupta, Bipin Kumar and Kedawat, Garima and Kumar, Pawan and Singh, Satbir and Suryawanshi, Sachin R. and Agrawal, Neetu and Gupta, Govind and Kim, Ah Ra and Gupta, R. K. and More, Mahendra A. and Late, Dattatray J. and Hahm, Myung Gwan}
}
@article {44233,
	title = {High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures},
	journal = {AIP Advances},
	volume = {8},
	year = {2018},
	month = {JAN},
	pages = {015117},
	type = {Article},
	abstract = {<p>The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).</p>},
	issn = {2158-3226},
	doi = {10.1063/1.5004769},
	author = {Gupta, Bipin Kumar and Kedawat, Garima and Gangwar, Amit Kumar and Nagpal, Kanika and Kashyap, Pradeep Kumar and Srivastava, Shubhda and Singh, Satbir and Kumar, Pawan and Suryawanshi, Sachin R. and Seo, Deok Min and Tripathi, Prashant and More, Mahendra A. and Srivastava, O. N. and Hahm, Myung Gwan and Late, Dattatray J.}
}
