@article { ISI:000331493200090,
	title = {Vapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior},
	journal = {ACS Applied Materials \& Interfaces},
	volume = {6},
	number = {3},
	year = {2014},
	month = {FEB},
	pages = {2018-2025},
	publisher = {AMER CHEMICAL SOC},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {<p>Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.</p>},
	keywords = {Electron emission, ID nanostructure, SnS nanowires, thermal evaporation, vapor-liquid-solid (VLS) growth},
	issn = {1944-8244},
	doi = {10.1021/am405039j},
	author = {Suryawanshi, Sachin R. and Warule, Sambhaji S. and Patil, Sandip S. and Patil, Kashinath R. and More, Mahendra A.}
}
@article { ISI:000354067400001,
	title = {Stable field emission from layered MoS2 nanosheets in high vacuum and observation of 1/f noise},
	journal = {Nanomaterials and Nanotechnology},
	volume = {5},
	year = {2015},
	month = {APR},
	pages = {10},
	publisher = {INTECH EUROPE},
	address = {JANEZA TRDINE 9, RIJEKA, 51000, CROATIA},
	abstract = {<p>Field emission and current noise of hydrothermally synthesized MoS2 nanosheets are investigated in ultra-high-vacuum and industrially suited high-vacuum conditions. The study reveals that the emission turn-on field is pressure dependent. Moreover, the MoS2 nanosheets exhibit more stable field-electron emission in high-vacuum than in ultra-high-vacuum conditions. The investigations on field-emission current fluctuations show features of 1/f-type noise in ultra-high-vacuum and high-vacuum conditions, attributed to adsorption and desorption processes. The post-field-emission results indicate the MoS2 nanosheets are a robust field emitter in high-vacuum conditions.</p>},
	keywords = {Electron emission, layered materials, MoS2, Noise measurement, Raman spectroscopy},
	issn = {1847-9804},
	doi = {10.5772/60071},
	author = {Kashid, Ranjit V. and Joag, Pracheetee D. and Thripuranthaka, M. and Rout, Chandra S. and Late, Dattatray J. and More, Mahendra A.}
}
