@article { ISI:000357868100006, title = {Electrochemically exfoliated black phosphorus nanosheets - prospective field emitters}, journal = {European Journal of Inorganic Chemistry}, number = {19}, year = {2015}, month = {JUL}, pages = {3102-3107}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

Herein we report field emission (FE) investigations on an electrochemically exfoliated few-layered black phosphorus nanosheet emitter at a base pressure of approximately 1x10(-8) mbar. The turn-on electric field required to draw an emission current density of approximately 10 A/cm(2) is found to be about 4.2 V/m. Furthermore, few-layered black phosphorus nanosheet emitters deliver an emission current density of about 170 A/cm(2) at an applied field of about 7.5 V/m. The emission current vs. time plot measured at preset current values of about 5 A shows emission current fluctuations within +/- 10\% of the average value, indicating the highly stable nature of the black phosphorus field emitter. Thus, the 2D black phosphorus nanosheets synthesized using the simple electrochemical exfoliation method can be utilized for micro/nanoelectronics and flat panel FE display applications.

}, keywords = {field emission, Layered compounds, Nanostructures, Phosphorus}, issn = {1434-1948}, doi = {10.1002/ejic.201500145}, author = {Erande, Manisha B. and Suryawanshi, Sachin R. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000377811100004, title = {Enhanced field emission behavior of layered MoSe2}, journal = {Materials Research Express}, volume = {3}, number = {3}, year = {2016}, month = {MAR}, pages = {Article Number: 035003}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.

}, keywords = {atomically thin nanosheets, chemical vapor deposition, field emission, layered MoSe2}, issn = {2053-1591}, doi = {10.1088/2053-1591/3/3/035003}, author = {Suryawanshi, Sachin R. and Pawbake, Amit S. and Pawar, Mahendra S. and Jadkar, Sandesh R. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000382207700055, title = {Exfoliated 2D black phosphorus nanosheets: field emission studies}, journal = {Journal of Vacuum Science \& Technology B}, volume = {34}, number = {4}, year = {2016}, month = {JUL}, pages = {041803}, publisher = {A V S AMER INST PHYSICS}, address = {STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA}, abstract = {

A few layer black phosphorus (BP) nanosheets are obtained by micromechanical cleavage from a bulk BP crystal. In a typical exfoliation procedure, a layer of BP is peeled off from bulk crystal with the help of Scotch tape and transferred onto SiO2/Si and pristine Si substrates. The morphological and structural analyses of the samples were carried out using an optical microscopy, a transmission electron microscopy, and a Raman spectroscopy. Field emission investigations on a few layered BP nanosheets on Si substrate were carried out at the base pressure of 1 x 10(-8) mbar. The turn-on value, corresponding to emission current density of similar to 1 mu A/cm(2), is found to be similar to 5.1V/mu m for BP nanosheets/Si emitter and high field enhancement factor (beta) similar to 1164, attributed to atomically thin/sharp edges of the BP nanosheets. The emission current shows good stability at a preset value of similar to 5 mu A over a period of more than 8 h. The present results demonstrate the potential of the mechanically exfoliated BP nanosheets/Si field emitter for the development of practical electron sources. (C) 2016 American Vacuum Society.

}, issn = {1071-1023}, doi = {10.1116/1.4945433}, author = {Suryawanshi, Sachin R. and More, Mahendra A. and Late, Dattatray J.} } @article {45714, title = {Enhanced field emission characteristics of a 3D hierarchical Hfo2-Zno heteroarchitecture}, journal = {ChemistrySelect}, volume = {2}, year = {2017}, month = {MAR}, pages = {2305-2310}, type = {Article}, abstract = {

Three dimensional (3D) HfO2-ZnO heteroarchitecture comprised of thin coating of HfO2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as-synthesized HfO2-ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO2-ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of similar to 885 mA/cm2 at an applied field of similar to 3.35 V/mm, against similar to 383 mA/cm(2) at an applied field of similar to 4.32 V/mu m for the pristine ZnO urchins emitter. Interestingly, the HfO2-ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion-bombardment resistance offered by the HfO2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour. Despite HfO2 being wide band gap and high-k material, the HfO2-ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode

}, keywords = {3D heteroarchitecture, Field Emission (FE), hydrothermal, PLD, TEM}, issn = {2365-6549}, doi = {10.1002/slct.201601723}, author = {Shisode, Raju T. and Suryawanshi, Sachin R. and Mistari, Chetan D. and Late, Dattatray J. and More, Mahendra A.} } @article {45698, title = {Extraction of the very high tunneling current and extremely stable emission current from GdB6/W-tip source synthesized using arc plasma}, journal = {ChemistrySelect}, volume = {2}, year = {2017}, month = {JAN}, pages = {562-566}, type = {Article}, abstract = {

Herein, we report the one step arc plasma synthesis of the GdB6 (Gadolinium hexaboride) nanoparticles and its field emission (FE) characteristics on tungsten point substrate (GdB6/ W). The SEM /TEM analysis revealed the GdB6 nanoparticles on W point substrate exhibit irregular shaped, grainy, dense, course morphology, i.e. uniformly covering the entire tip substrate surface. For GdB6/W point source, the values of the turn-on and threshold fields, defined as field required to draw an emission current density similar to 1 mA/cm(2) and similar to 100 mA/cm(2), respectively are found to be similar to 2.2 and similar to 2.7 V/mm, for anodecathode separation of similar to 1 mm. Interestingly, a very high emission current density of similar to 3.5 A/cm(2) has been drawn from the GdB6/W point emitter at relatively lower applied field of similar to 6.4 V/mm. The field enhancement factor found to be similar to 10,250. The GdB6/W point electron source exhibits a good emission current stability at similar to 10 mA for a period of 6 hr. The emission current stability is enumerated in terms of standard deviation and its magnitude has been measured to be only 1.72\% with respect to the average value. The superlative field emission characteristics signify the GdB6/W point electron source as potential candidates for vacuum micro/nanoelectronics device applications.

}, keywords = {Arc Plasma, field emission, Thin films}, issn = {2365-6549}, doi = {10.1002/slct.201601587}, author = {Suryawanshi, Sachin R. and Kanhe, Nilesh and Mathe, Vikas L. and Phase, Deodatta M. and Late, Dattatray J. and More, Mahendra A.} }